automobile exhaust monitoring, missile tracking, fire monitoring, etc. [1][2][3][4] Generally, the performance of UV detector is strongly depended on the sensing materials, and the wide bandgap semiconductors, which include GaN, SiC, ZnO, MoS 2 , InSe, etc, [5][6][7][8][9] are the preferred candidates owing to the high selectivity for UV light. Among them, ZnO is a prior choice for fabricating UV photodetectors at room temperature owing to the high electron mobility, [10] suitable bandgap (3.37 eV), high exciton binding energy (60 meV), [11] and low-cost preparation process with low cost. [12] Besides, the morphologies of ZnO NWs can increase the interaction area between UV light and ZnO NWs due to their high surface to volume ratio. [13] Particularly, a self-powered photodetector based on ZnO NWs was constructed by built-in potential in a p-n junction [14] or Schottky junction. [15,16] However, the inevitable oxygen vacancy defects in ZnO [17] will cause the persistent photoconductivity (PPC) effect, which prolongs the response and recovery time. [18,19] Pyro-phototronic effect of ZnO is an effective way to shorten the response/recovery time remarkably by using pyroelectric potential generated from the lightheating effect. [20,21] The ultrafast UV sensing will be achieved by introducing light-induced pyro-phototronic effect. [22][23][24]