2009
DOI: 10.1364/jot.76.000555
|View full text |Cite
|
Sign up to set email alerts
|

Plasmon-polariton surface modes and nanostructuring of semiconductors by femtosecond laser pulses

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

1
7
0

Year Published

2010
2010
2021
2021

Publication Types

Select...
6
2

Relationship

0
8

Authors

Journals

citations
Cited by 21 publications
(8 citation statements)
references
References 19 publications
1
7
0
Order By: Relevance
“…Ti nanostructures fabricated for h \ ~ 18 m.l cm -2 and the number of shots per spot IVj « 7 x 1 0 2 demonstrate a set of well-defined quasi-periodical sub-micron trenches (the average period A nano ~ 500 nm) with their wavevectors K (\K\ = 1 /A ) collinear to the polarization e and scanning velocity v (figure 1). The orientation of the trenches (K || e) is consistent with the standard 'interference' model of their fabrication via constructive interference between the incident fs-laser and excited SPP wave [10][11][12][13]. The trenches, rather than nearly harmonic ripples with the same period, appear because of the moderate laser fluence F1 ~ 18 mJ cm -2 , which is equal to the nanostructuring threshold, f n;ino «a 18 mJ cm -2 [16].…”
Section: Resultssupporting
confidence: 70%
See 1 more Smart Citation
“…Ti nanostructures fabricated for h \ ~ 18 m.l cm -2 and the number of shots per spot IVj « 7 x 1 0 2 demonstrate a set of well-defined quasi-periodical sub-micron trenches (the average period A nano ~ 500 nm) with their wavevectors K (\K\ = 1 /A ) collinear to the polarization e and scanning velocity v (figure 1). The orientation of the trenches (K || e) is consistent with the standard 'interference' model of their fabrication via constructive interference between the incident fs-laser and excited SPP wave [10][11][12][13]. The trenches, rather than nearly harmonic ripples with the same period, appear because of the moderate laser fluence F1 ~ 18 mJ cm -2 , which is equal to the nanostructuring threshold, f n;ino «a 18 mJ cm -2 [16].…”
Section: Resultssupporting
confidence: 70%
“…According to their pronounced longitudinal polarization (K || e), the above-mentioned surface stripes with the modified material surface with or without trenches appear near to maxima of the 'laser-SPP' interference pattern on the surface, described by the formula for the spatially modulated total fluence F% [13] the experimentally observed surface stripes with or without axial trenches represent the surface modification regions close to the interference maxima (figure 2 ), while the axial trenches appear when the peak values > f ahi «a 0.3 J cm -2 [24]. The last inequality is satisfied for Fi « 18 mJ cm -2 when, according to equation 1, Fspp approaches ~5 J cm -2 with the surface electromagnetic (SPP) field concentrated thus by ~1 0 2 times because of the diffractive and interference redistribution of the incident plane laser wave into the propagating SPP wave localized within the extremely narrow (compared to the laser spot) near-interface skin layer [12].…”
Section: Resultsmentioning
confidence: 99%
“…A specific feature of an ultrashort pulse interaction with a matter is its ability to change the dielectric properties of the material due to the response of the electronic subsystem, whereas other processes (in particular, associated with the transfer of energy to the lattice) start after the end of the light pulse. Although initially amorphous GST225 is a semiconductor, [ 28 ] when exposed to ultrashort pulses, an increase in the density of free carriers is possible, which at a certain threshold value will lead to “metallization” [ 29–33 ] of the GST surface. In this case, the real part of the dielectric permittivity ε changes its sign to negative and favorable conditions appear for the formation of surface waves.…”
Section: Discussionmentioning
confidence: 99%
“…In the interaction of polarized femtosecond laser radiation the formation of nanostructures with anomalous orientation gE t (normal incidence) was observed for condensed matter with physically different properties: metals, semiconductors, dielectrics by Makin (2009). The period d of such structures was small in comparison with wavelength of incident radiation, usually d<<.…”
Section: Anomalous Grating Orientationmentioning
confidence: 99%