Molybdenum disulfide (MoS 2 ) has been proved to be a potential electromagnetic wave (EMW) absorber. However, the limited EMW attenuation mechanisms and conductivity have always been recognized as the major challenges impeding their further developments. In this study, a new dielectric tuning strategy giving rise to high EMW attenuation performance by manipulating phase content (with 0, 24, 50, and 100 wt% 1T phase) toward MoS 2 is demonstrated. The greatly introduced 2H/1T interfaces facilitate the dipole distribution dynamics, and the metal-semiconductor mixed phase enhances the electron transfer ability. Benefiting from the structural merits, the MoS 2 with 50 wt% 1T absorber delivers the maximum reflection loss of −45.5 dB and effective absorbing bandwidth of ≈3.89 GHz, corresponding to nearly ten times higher than that of pure 2H counterpart. Moreover, the Computer Simulation Technology (CST) simulation and Lorentz transmission electron microscope are performed to visualize the structural advantages of MoS 2 absorbers with mixed 2H/1T phases. By manipulating the phase compositions, this study provides a deep understanding and opens an avenue in developing efficient and high performance transition metal dichalcogenides (e.g., WS 2 , MoSe 2 , and WSe 2 ) absorbers.