Plasmonic HEMT Terahertz Transmitter based on the Dyakonov-Shur Instability: Performance Analysis and Impact of Nonideal Boundaries

Nafari, Mona; Aǐzin, G. R.; Jornet, Josep Miquel

doi:10.1103/physrevapplied.10.064025

Cited by 35 publications

(25 citation statements)

References 26 publications

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“…The largest increment corresponds to the boundary conditions of the short-circuited source and open drain. Having finite impedances at the source and drain reduces the increment [ 111 , 112 ].…”

Section: Plasmonic Crystalsmentioning

confidence: 99%

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Shur

Aǐzin

Otsuji

et al. 2021

Sensors

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Ever increasing demands of data traffic makes the transition to 6G communications in the 300 GHz band inevitable. Short-channel field-effect transistors (FETs) have demonstrated excellent potential for detection and generation of terahertz (THz) and sub-THz radiation. Such transistors (often referred to as TeraFETs) include short-channel silicon complementary metal oxide (CMOS). The ballistic and quasi-ballistic electron transport in the TeraFET channels determine the TeraFET response at the sub-THz and THz frequencies. TeraFET arrays could form plasmonic crystals with nanoscale unit cells smaller or comparable to the electron mean free path but with the overall dimensions comparable with the radiation wavelength. Such plasmonic crystals have a potential of supporting the transition to 6G communications. The oscillations of the electron density (plasma waves) in the FET channels determine the phase relations between the unit cells of a FET plasmonic crystal. Excited by the impinging radiation and rectified by the device nonlinearities, the plasma waves could detect both the radiation intensity and the phase enabling the line-of-sight terahertz (THz) detection, spectrometry, amplification, and generation for 6G communication.

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Section: Plasmonic Crystalsmentioning

confidence: 99%

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Shur

Aǐzin

Otsuji

et al. 2021

Sensors

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show abstract

“…In this direction, concerted effort has been dedicated to solid-state electronics and photonics approaches [130]. However, the electronics approach suffers from limited output power at THz frequencies and photonics approach based on quantum cascade lasers offers poor performance at room temperature [134]. In this direction, micro/nanoscale graphene transistors with extremely high carrier mobility can pave the way for the development of THz-based signal generation and sensitive detection components [135].…”

Section: Miniaturizationmentioning

confidence: 99%

Universal Transceivers: Opportunities and Future Directions for the Internet of Everything (IoE)

Civas,

Cetinkaya,

Kuscu

et al. 2021

Preprint

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The Internet of Everything (IoE) is a recently introduced information and communication technology (ICT) framework promising for extending the human connectivity to the entire universe, which itself can be regarded as a natural IoE, an interconnected network of everything we perceive. The countless number of opportunities that can be enabled by IoE through a blend of heterogeneous ICT technologies across different scales and environments and a seamless interface with the natural IoE impose several fundamental challenges, such as interoperability, ubiquitous connectivity, energy efficiency, and miniaturization.The key to address these challenges is to advance our communication technology to match the multi-scale, multi-modal, and dynamic features of the natural IoE. To this end, we introduce a new communication device concept, namely the universal IoE transceiver, that encompasses transceiver architectures that are characterized by multi-modality in communication (with modalities such as molecular, RF/THz, optical and acoustic) and in energy harvesting (with modalities such as mechanical, solar, biochemical), modularity, tunability, and scalability. Focusing on these fundamental traits, we provide an overview of the opportunities that can be opened up by micro/nanoscale universal transceiver architectures towards realizing the IoE applications. We also discuss the most pressing challenges in implementing such transceivers and briefly review the open research directions. Our discussion is particularly focused on the opportunities and challenges pertaining to the IoE physical layer, which can enable the efficient and effective design of higher-level techniques. We believe that such universal transceivers can pave the way for seamless connection and communication with the universe at a deeper level and pioneer the construction of the forthcoming IoE landscape.

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“…This approach does not allow direct evaluation and analysis of the THz EM radiation expected in the final stationary state of the 2D system and regarded as the most important outcome of the DS instability. The numerical solution of the DS instability problem with the full system of the Maxwell equations instead of the static Poisson equation was developed for the ungated 2D electron gas in semiconductor heterostructures in [48] and for the III-V semiconductor-based HEMT in [49]. Very recently, the numerical solution of the DS instability problem in the graphene-based transistor was developed in [39] using the quasi-static model for the EM part of the problem.…”

Section: Numerical Analysis Of the Ds Instability In The 2d Graphene ...mentioning

confidence: 99%

Hydrodynamic theory of the Dyakonov-Shur instability in graphene transistors

Crabb,

Cantos-Roman,

Jornet

et al. 2021

Preprint

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We present a comprehensive theory of the Dyakonov-Shur (DS) plasma instability in currentbiased graphene transistors. Using the hydrodynamic approach, we derive equations describing the DS instability in the two-dimensional electron fluid in graphene at arbitrary values of electron drift velocity. These non-linear equations together with Maxwell's equations are used for numerical analysis of the spatial and temporal evolution of the graphene electron system after the DS instability is triggered by random current fluctuations. We analyze conditions necessary for the onset of the DS instability and the properties of the final stationary state of the graphene electron system. We demonstrate that the instability results in the coherent anharmonic oscillatory state of the electron fluid and calculate both the spatial distribution and the power of the electromagnetic radiation generated by the graphene transistor in the DS instability regime.

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Plasmonic HEMT Terahertz Transmitter based on the Dyakonov-Shur Instability: Performance Analysis and Impact of Nonideal Boundaries

Cited by 35 publications

References 26 publications

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications

Universal Transceivers: Opportunities and Future Directions for the Internet of Everything (IoE)

Hydrodynamic theory of the Dyakonov-Shur instability in graphene transistors

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