Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges

Yin, Liang; Li, Chun; Huang, Yong‐Zhen; Zhang, Qing

doi:10.1021/acsnano.0c07011

Cited by 76 publications

(53 citation statements)

References 152 publications

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“…The higher threshold for plasmonic lasers is owing to the intrinsic ohmic loss of metals. [30,31] The spontaneous emission factors are 0.15 and 0.04, respectively, for plasmonic and photonic lasers estimated from "S" shaped light-in-light-out curve according to the rate equation calcul1ation. Deviation from rate equation fitting at high pump density results from many-body effects, such as Auger recombination process, owing to higher Auger recombination rate constant around 1.35 × 10 −27 cm 6 s −1 .…”

Section: Resultsmentioning

confidence: 99%

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH₃NH₃PbBr₃ Nanowires at Room Temperature

Wang

Jia

Guan

et al. 2021

Laser & Photonics Reviews

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Lead halide perovskites have gained tremendous attentions in many fields, especially in nanolasers, owing to the excellent optoelectronic properties. However, the underlying lasing mechanism is not clear in both plasmonic and photonic nanolasers at room temperature. Here, the plasmonic lasers and the photonic counterparts based on organic–inorganic hybrid lead tri‐bromine perovskite nanowires are achieved at room temperature and are compared in terms of lasing evolution, lasing wavelengths, and lasing dynamics. The same spectra evolution and the same emission wavelength indicate that the plasmonic and the photonic CH3NH3PbBr3 nanowire lasers have the same gain origination. The calculated Mott density lower than the threshold density and lasing photon energy lower than exciton energy prove that an electron–hole plasma contributes to both the two types of lasing actions from perovskite nanowires at room temperature. The work deepens the understanding of underlying mechanism of perovskite nanowire lasers.

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Section: Resultsmentioning

confidence: 99%

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH₃NH₃PbBr₃ Nanowires at Room Temperature

Wang

Jia

Guan

et al. 2021

Laser & Photonics Reviews

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“…To date, SPASER device had already been experimentally demonstrated using many different nanostructures, [ 26,29,43–51 ] like nanowire, [ 31,52 ] nanorod, [ 37,53 ] nanosquare, [ 35 ] nanopillar, [ 32 ] nanobelt, [ 36 ] nanopatch, [ 54 ] nanoparticle arrays, [ 38,55–59 ] et al. Several representative works were showed in Figure 1a–f.…”

Section: Spaser Research: Brief Overviewmentioning

confidence: 99%

SPASER as Nanoprobe for Biological Applications: Current State and Opportunities

Wang

Melentiev

et al. 2022

Laser & Photonics Reviews

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Since the concept of surface plasmon amplification by stimulated emission of radiation (SPASER) was proposed in 2003, great progresses have been made on two kinds of plasmonic nanolasers, namely SPASER device and SPASER nanoparticle. In comparison, SPASER nanoparticle, with ultra‐narrow emission line, small size, and good biocompatibility, is a kind of promising luminescent nanoprobe and has a bright application prospect in biomedical imaging and sensing. Hence, it is gradually becoming an attractive research hotspot in the world. However, as the research on SPASER nanoparticle is still in its infancy, there are still lots of problems to be solved before it is widely applied. In this paper, the latest research advances of SPASER nanoparticles and their biological applications are reviewed. Besides existing problems, challenges and opportunities of SPASER nanoparticles as next generation luminescent nanoprobes are discussed as well.

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“…Among numerous semiconductors, III-V compound materials, such as InP, GaAs, and GaN, receive widespread attention due to the excellent electrical properties and high-electron-mobility in transistors [ 79 , 80 , 81 , 82 ]. Compared with Si, most III-V compounds have a direct bandgap, making them can be used as light-emitting diodes (LEDs) and lasers [ 83 , 84 , 85 , 86 , 87 ]. The combination of III-V materials with the Si-CMOS platform can be used as a hybrid solution for the on-chip integration of Si-based photonics.…”

Section: Heterogeneous Bonding For Iii-v and Wide Bandgap Semiconductor Thin-film Transfer Onto Si Substratementioning

confidence: 99%

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges

Cited by 76 publications

References 152 publications

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH₃NH₃PbBr₃ Nanowires at Room Temperature

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH₃NH₃PbBr₃ Nanowires at Room Temperature

SPASER as Nanoprobe for Biological Applications: Current State and Opportunities

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

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Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges

Cited by 76 publications

References 152 publications

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH3NH3PbBr3 Nanowires at Room Temperature

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH3NH3PbBr3 Nanowires at Room Temperature

SPASER as Nanoprobe for Biological Applications: Current State and Opportunities

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Contact Info

Product

Resources

About

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH₃NH₃PbBr₃ Nanowires at Room Temperature

The Electron–Hole Plasma Contributes to Both Plasmonic and Photonic Lasing from CH₃NH₃PbBr₃ Nanowires at Room Temperature