Plasmonic performance, electrical and optical properties of titanium nitride nanostructured thin films for optoelectronic applications

El-Rahman, A. M. Abd; Mohamed, S. H.; Khan, Mohd Taukeer; Awad, M. A.

doi:10.1007/s10854-021-07197-3

Cited by 6 publications

(4 citation statements)

References 51 publications

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“…The terminal compounds (TiN with x = 0 and TiO with x = 1) as well as all the intermediate compounds with x between 0 and 1 have a rock-salt structure (Figure ), but they possess wide-ranging physicochemical properties . One of the terminal compounds of the family, TiN ( x = 0), has been known for its well-established properties for decades. − A controlled variation of oxygen in TiNO can be used in the fabrication of multijunction solar cells, electrocatalysts, photoelectrocatalysts, − photodetectors, , and plasmonic , and metamaterial devices. − Our success in producing semiconducting TiNO with room-temperature conductivity (∼158–6493 Ω –1 cm –1 ) significantly higher than that of carbon (∼1 Ω –1 cm –1 ) may open up the door for the development of carbon-free support materials as an electrocatalyst/photoelectrocatalyst in water-splitting research.…”

Section: Introductionmentioning

confidence: 99%

Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation

Roy

Sarkar

Som

et al. 2023

ACS Appl. Mater. Interfaces

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Epitaxial titanium nitride (TiN) and titanium oxynitride (TiON) thin films have been grown on sapphire substrates using a pulsed laser deposition (PLD) method in high-vacuum conditions (base pressure <3 × 10 −6 T). This vacuum contains enough residual oxygen to allow a time-independent gas phase oxidation of the ablated species as well as a time-dependent regulated surface oxidation of TiN to TiON films. The time-dependent surface oxidation is controlled by means of film deposition time that, in turn, is controlled by changing the number of laser pulses impinging on the polycrystalline TiN target at a constant repetition rate. By changing the number of laser pulses from 150 to 5000, unoxidized (or negligibly oxidized) and oxidized TiN films have been obtained with the thickness in the range of four unit cells to 70 unit cells of TiN/TiON. X-ray photoelectron spectroscopy (XPS) investigations reveal higher oxygen content in TiON films prepared with a larger number of laser pulses. The oxidation of TiN films is achieved by precisely controlling the time of deposition, which affects the surface diffusion of oxygen to the TiN film lattice. The lattice constants of the TiON films obtained by x-ray diffraction (XRD) increase with the oxygen content in the film, as predicted by molecular dynamics (MD) simulations. The lattice constant increase is explained based on a larger electrostatic repulsive force due to unbalanced local charges in the vicinity of Ti vacancies and substitutional O. The bandgap of TiN and TiON films, measured using UV−visible spectroscopy, has an asymmetric V-shaped variation as a function of the number of pulses. The bandgap variation following the lower number of laser pulses (150−750) of the V-shaped curve is explained using the quantum confinement effect, while the bandgap variation following the higher number of laser pulses (1000−5000) is associated with the modification in the band structure due to hybridization of O 2p and N 2p energy levels.

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Section: Introductionmentioning

confidence: 99%

Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation

Roy

Sarkar

Som

et al. 2023

ACS Appl. Mater. Interfaces

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“…However, it is known that the thickness and roughness of the films also influence the reflectance and transmittance properties in such a way that the increase in thickness (sample A8 has greater thickness and roughness) results in a decrease in reflectance and transmittance (sample A8 has lower reflectance) 39,41,42 .…”

Section: Resultsmentioning

confidence: 99%

Study of the Optoelectronic Properties of Titanium Nitride Thin Films Deposited on Glass by Reactive Sputtering in the Cathodic Cage

Madureira,

Monção,

Silva

et al. 2023

Mat. Res.

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We investigate the structural, optical, thermal-optical, and electronic properties of TiN x thin films utilizing a variety of experimental techniques, including spectroscopic ellipsometry, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, thermal lens spectroscopy, and UV-VIS spectroscopy. Our experimental results indicate a remarkable metallic character in the TiN x thin films deposited under lower N 2 flow during treatment, as well as an increase in reflectance in the infrared region and thermal diffusivity as the partial N 2 flow is reduced, which is consistent with previous experimental studies. The microscopic origin of these trends is explained in terms of the atomic structure of the system, where Ti atoms contribute free carriers that interact with IR radiation and N atoms create imperfections in the lattice, causing greater scattering of phonons, respectively. The experimental results also indicate that the roughness of the films produced with a lower N 2 partial flow was lower than that of the films with a higher N 2 partial flow. To explain the deviation of optical properties from the ideal case, surface oxidation is also investigated. This facilitates the coating of smarting windows with TiNx thin films.

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“…These films clearly showed superior plasmonic properties at high temperatures compared to noble metals 28 , 34 . Clearly, It is of interest to see whether the plasmonic properties can be retained in thinner films even if the films are grown at relatively lower temperatures 33 , 35 . Chang et al 36 were able to grow TiN thin films at low-temperature using sputtering on various substrates.…”

Section: Introductionmentioning

confidence: 99%

Tuning the plasmonic resonance in TiN refractory metal

Rana,

Sharma,

Bera

et al. 2024

Sci Rep

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Plasmonic coatings can absorb electromagnetic radiation from visible to far-infrared spectrum for the better performance of solar panels and energy saving smart windows. For these applications, it is important for these coatings to be as thin as possible and grown at lower temperatures on arbitrary substrates like glass, silicon, or flexible polymers. Here, we tune and investigate the plasmonic resonance of titanium nitride thin films in lower thicknesses regime varying from ~ 20 to 60 nm. High-quality crystalline thin films of route-mean-square roughness less than ~ 0.5 nm were grown on a glass substrate at temperature of ~ 200 °C with bias voltage of − 60 V using cathodic vacuum arc deposition. A local surface-enhanced-plasmonic-resonance was observed between 400 and 500 nm, which further shows a blueshift in plasmonic frequency in thicker films due to the increase in the carrier mobility. These results were combined with finite-difference-time-domain numerical analysis to understand the role of thicknesses and stoichiometry on the broadening of electromagnetic absorption.

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Plasmonic performance, electrical and optical properties of titanium nitride nanostructured thin films for optoelectronic applications

Cited by 6 publications

References 51 publications

Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation

Modulation of Structural, Electronic, and Optical Properties of Titanium Nitride Thin Films by Regulated In Situ Oxidation

Study of the Optoelectronic Properties of Titanium Nitride Thin Films Deposited on Glass by Reactive Sputtering in the Cathodic Cage

Tuning the plasmonic resonance in TiN refractory metal

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