A red InGaN-based nanocolumn micro μLED with an emission diameter of ϕ2.2 μm was demonstrated to achieve an on-wafer external quantum efficiency (EQE) of 2.1% at the peak wavelength of 615 nm. The LED was fabricated by repeating the electrode process on the same nanocolumn pattern area and reducing the emission diameter from ϕ80 to ϕ2.2 μm. The peak EQE, which was maximized at ∼25 A cm−2, increased by decreasing the emission diameter from 1.2% to 2.1%. This behavior, which differs from that of InGaN-film LEDs, is characterized as a unit of independent nano-LEDs with passivated sidewalls of nanocolumn LEDs.