2014
DOI: 10.1021/ph500110t
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Plasmonic Resonance toward Terahertz Perfect Absorbers

Abstract: Metamaterial perfect absorbers have garnered significant interest with applications in sensing, imaging, and energy harnessing. Of particular interest are terahertz absorbers to overcome the weak terahertz response of natural materials. Here, we propose lossy plasmonic resonance in silicon-based annular microcavities for perfect terahertz absorption. This mechanism is in stark contrast to earlier demonstrations of conventional terahertz perfect absorbers that invoke Lorentzian electric and magnetic resonances.… Show more

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Cited by 76 publications
(26 citation statements)
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“…An example is the need for a perfect absorber of terahertz waves, which has applications effi cient narrowband perfect absorption with a plasmonic coaxial mode. [ 31 ] In this work, we show that distinctive plasmonic modes in silicon-based cavities can serve to greatly enhance the absorption bandwidth for ultrabroadband operation. Our single-layered structure is more attractive than prior broadband multilayered absorbers in terms of fabrication simplicity, cost, and allows for possible integration into silicon-based systems.…”
Section: Introductionmentioning
confidence: 78%
See 1 more Smart Citation
“…An example is the need for a perfect absorber of terahertz waves, which has applications effi cient narrowband perfect absorption with a plasmonic coaxial mode. [ 31 ] In this work, we show that distinctive plasmonic modes in silicon-based cavities can serve to greatly enhance the absorption bandwidth for ultrabroadband operation. Our single-layered structure is more attractive than prior broadband multilayered absorbers in terms of fabrication simplicity, cost, and allows for possible integration into silicon-based systems.…”
Section: Introductionmentioning
confidence: 78%
“…[ 30,31 ] Note that DRIE was performed using the Bosch process, where a mixture of SF6 (to etch silicon) and C4F8 (to passivate sidewalls to enable deep etching) gas was alternatively permitted into the high vacuum chamber and ionized by applying RF power. The etch rate of the silicon wafer using the Bosch DRIE process was approximately 0.4 µm per cycle, with process timed to etch 65-µm deep trenches into the doped silicon wafer.…”
Section: Full Paper Full Paper Full Papermentioning
confidence: 99%
“…On the other hand, lossy dielectric materials with moderately high relative permittivity are engineered to enhance coupling between and field confinement within subwavelength resonant cavity bodies. Such materials can also be designed to confined fields and subsequently dissipate in resonators for broadband terahertz absorbers …”
Section: Dielectric Materials As Resonant Elements and Structuresmentioning
confidence: 99%
“…Doped dielectric resonators, for example, doped Si, exhibit metallic behavior and support LSPRs in confined cavities or delocalized in‐plane SPP, on resonance. Examples of engineered dielectric material‐based resonator geometries include microcylindrical cavities, cylinders, cross‐shaped, disks, sawtooth, microspheres, etc., have been demonstrated for perfect absorption of terahertz radiation. Heavily doped Si has seen wide application in this respect due to ease of fabrication based on its crystallographic nature.…”
Section: Lossless Dielectric Materialsmentioning
confidence: 99%
“…On the line of scaling‐down, the research passed the challenges of sub‐mm waves and THz frequencies, one of the most difficult and unexplored domains in electromagnetics . In this range, metamaterials offer exciting opportunities for perfect absorbers, emitters, fibers, switches, modulators , also available with superconducting , or flexible implementations.…”
Section: Introductionmentioning
confidence: 99%