Plasmons and Screening in Monolayer and Multilayer Black Phosphorus

Low, Tony; Roldán, Rafael; Wang, Han; Xia, Fengnian; Avouris, Phaedon; Moreno, Luis Martín; Guinea, F.

doi:10.1103/physrevlett.113.106802

Cited by 561 publications

(524 citation statements)

References 37 publications

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“…Moreover, such models basically rely upon the effective mass approximation, whose applicability is not well justified for BP even in the low-energy range due to the presence of flat bands. Last but not least, although the extension of the k · p model appears straightforward to the multilayer case [13,14,17], it becomes dependent on thickness-dependent parameters, which are a priori not known.…”

Section: Introductionmentioning

confidence: 99%

“…A number of low-energy electronic properties of pristine phosphorene can be efficiently described in terms of the (2 × 2) k · p Hamiltonian [8,[12][13][14][15][16][17] with parameters determined to reproduce first-principles calculations. Being determined in reciprocal space and designed to describe the valence band (VB) and conduction band (CB) edges only, the k · p Hamiltonians are not well suited for studying real-space problems.…”

Section: Introductionmentioning

confidence: 99%

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Toward a realistic description of multilayer black phosphorus: FromGWapproximation to large-scale tight-binding simulations

Руденко¹,

Yuan²,

Katsnelson³

2015

Phys. Rev. B

214

147

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We provide a tight-binding model parametrization for black phosphorus (BP) with an arbitrary number of layers. The model is derived from partially self-consistent GW0 approach, where the screened Coulomb interaction W0 is calculated within the random phase approximation on the basis of density functional theory. We thoroughly validate the model by performing a series of benchmark calculations, and determine the limits of its applicability. The application of the model to the calculations of electronic and optical properties of multilayer BP demonstrates good quantitative agreement with ab initio results in a wide energy range. We also show that the proposed model can be easily extended for the case of external fields, yielding the results consistent with those obtained from first principles. The model is expected to be suitable for a variety of realistic problems related to the electronic properties of multilayer BP including different kinds of disorder, external fields, and many-body effects.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Toward a realistic description of multilayer black phosphorus: FromGWapproximation to large-scale tight-binding simulations

Руденко¹,

Yuan²,

Katsnelson³

2015

Phys. Rev. B

214

147

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“…In the following, we shall use 2MDS in few-layer black phosphorus as a model structure to illustrate the valley-filtering effect. It is proposed that the band gap of two-dimensional black phosphorus can be engineered via perpendicular electric field, surface doping, pressure, or laser irradiation [49][50][51][52][53][54][55]. Band-gap tuning [53], band-gap closure, and band inversion [49] of few-layer black phosphorus have been realized in recent experiments.…”

Section: A Concept Of Pseudospin-assisted Valley Filtermentioning

confidence: 99%

“…Such dispersion exhibits a "semi-Dirac" behavior, i.e., ε k along k x axis, and k y axis exhibits nonrelativistic parabolic and ultrarelativistic linear dispersion, respectively [51]. The band topology is crucially determined by the sign of [ Fig.…”

Section: Modelmentioning

confidence: 99%

“…In this work, we propose a class of all-electric-controlled valley filtering based on the pseudospin-assisted valleycontrasting quantum tunneling in quasi-two-dimensional system with merging Dirac cones (2MDS) which can be created in a wide class of systems including honeycomb lattice of cold atoms [46], graphene [47,48], few-layer black phosphorus [49][50][51][52][53][54][55], Weyl semimetal [56], and antimonene (single layer of antimony [57]). The valley polarization is fully gate controlled and is robust against gate voltage fluctuation.…”

Section: Introductionmentioning

confidence: 99%

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Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve, and universal reversible logic gate

et al. 2017

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Despite much anticipation of valleytronics as a candidate to replace the aging complementary metal-oxidesemiconductor (CMOS) based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all electrically in an electrostatic setting. Here, we propose a class of all-electric-controlled valley filter, valve, and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valleypseudomagnetoresistance ratio of over 10000% can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical reversibility in two-input universal Boolean gate. The (2+1) polarization states (two distinct valleys plus a null polarization) reestablish one-to-one inputto-output mapping, a crucial requirement for logical reversibility, and significantly reduce the complexity of reversible circuits. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing. Despite much anticipation of valleytronics as a candidate to replace the aging complementary metal-oxidesemiconductor (CMOS) based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all electrically in an electrostatic setting. Here, we propose a class of all-electric-controlled valley filter, valve, and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudomagnetoresistance ratio of over 10 000% can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical reversibility in two-input universal Boolean gate. The (2 + 1) polarization states (two distinct valleys plus a null polarization) reestablish one-to-one input-to-output mapping, a crucial requirement for logical reversibility, and significantly reduce the complexity of reversible circuits. Our results suggest that the synergy of va...

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Toward Sensitive Room‐Temperature Broadband Detection from Infrared to Terahertz with Antenna‐Integrated Black Phosphorus Photoconductor

Wang

Liu

Chen

et al. 2017

Adv Funct Materials

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Graphene‐like two‐dimensional materials (graphene, transition‐metal dichalcogenides (TMDCs)) have received extraordinary attention owing to their rich physics and potential applications in building nanoelectronic and nanophotonic devices. Recent works have concentrated on increasing the responsivity and extending the operation range to longer wavelengths. However, the weak absorption of gapless graphene, and the large bandgap (>1 eV) and low mobility in TMDCs have limited their spectral usage to only a narrow range in the visible spectrum. In this work, we demonstrate for the first time a high‐performance, antenna‐integrated, black phosphorus (BP)‐based photoconductor with ultra‐broadband detection from the infrared to terahertz frequencies. The good trade‐off between the moderate bandgap and good mobility results in a broad spectral absorption that is superior to that of graphene. Different photoconductive mechanisms, such as photothermoelectric (PTE), bolometric, and electron–hole generation can be distinguished depending on the device geometry, incident wavelength, and power. Especially, the photoconductive response remains highly efficient, even when the photon energy is extended to the terahertz (THz) band at room temperature, which is driven by the thermoelectric‐induced well. The proposed photodetectors have a superior performance with an excellent sensitivity of over 300 V W−1, low noise equivalent power (NEP) (smaller than 1 nW Hz−0.5 (10 pW Hz−0.5) with respect to the incident (absorbed) power), and fast response, all of which play key roles in multispectral biological imaging, remote sensing, and optical communications.

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Plasmons and Screening in Monolayer and Multilayer Black Phosphorus

Cited by 561 publications

References 37 publications

Toward a realistic description of multilayer black phosphorus: FromGWapproximation to large-scale tight-binding simulations

Toward a realistic description of multilayer black phosphorus: FromGWapproximation to large-scale tight-binding simulations

Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve, and universal reversible logic gate

Toward Sensitive Room‐Temperature Broadband Detection from Infrared to Terahertz with Antenna‐Integrated Black Phosphorus Photoconductor

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