Plastic Deformation and Failure Analysis of Phase Change Random Access Memory

Hongxin,; Shi, Jianrong; Luping,; Lee, Myeong Soo; Koon, Hock; Zhao, Lei; Rong,; Li, Qing; Jianming,; Guan, Kian; Chong, Frederic T.; Chong, Tow Chong

doi:10.1143/jjap.48.04c064

Cited by 3 publications

(1 citation statement)

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“…The simulation model and parameters are same as the previously reported. 13,14) In this simulation, it is assumed that the melting temperature T m of Ge 2 Sb 2 Te 5 is 600 C and initial state is fully crystalline state. RESET process is simulated with different pulse width and pulse amplitude.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Shi¹,

Koon²,

Rong³

et al. 2012

Jpn. J. Appl. Phys.

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Phase change random access memory (PCRAM) is the most promising candidate for the next-generation nonvolatile memory. Recently, elevated-confined PCRAM using an elevated metal column was proposed as a promising approach to achieve lower RESET current. This paper studied the writing strategy to enhance the endurance of elevated-confined PCRAM through both experiment and simulation. Elevated-confined PCRAM incorporating Ge 2 Sb 2 Te 5 were fabricated and tested. The overwriting test showed that the failure mode of elevated-confined PCRAM was stuck SET. As diffusion, which is the main reason for stuck SET, is highly dependent on working temperature, writing strategies are investigated to minimize the over-heating in elevated-confined PCRAM. From the simulation results, it is found that RESET pulse width is more effective than RESET pulse amplitude in controlling of over-heating. The testing results showed that the endurance cycles can be improved from 10 6 to 10 8 with shorter and lower RESET pulse, which is consisted with simulation results. #

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Endurance Enhancement of Elevated-Confined Phase Change Random Access Memory

Shi¹,

Koon²,

Rong³

et al. 2012

Jpn. J. Appl. Phys.

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Elevated-Confined Phase-Change Random Access Memory Cells

Lee¹,

Koon

Shi³

et al. 2010

Jpn. J. Appl. Phys.

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A new elevated-confined phase-change random access memory (PCRAM) cell structure to reduce power consumption was proposed. In this proposed structure, the confined phase-change region is sitting on top of a small metal column enclosed by a dielectric at the sides. Hence, more heat can be effectively sustained underneath the phase-change region. As for the conventional structure, the confined phase-change region is sitting directly above a large planar bottom metal electrode, which can easily conduct most of the induced heat away. From simulations, a more uniform temperature profile around the active region and a higher peak temperature at the phase-change layer (PCL) in an elevated-confined structure were observed. Experimental results showed that the elevated-confined PCRAM cell requires a lower programming power and has a better scalability than a conventional confined PCRAM cell.

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