2001
DOI: 10.1016/s1359-6454(00)00378-5
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Plastic strain and strain gradients at very small indentation depths

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Cited by 161 publications
(84 citation statements)
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“…This indentation size effect (ISE) has been explained using the concept of geometrically necessary dislocations (GNDs) and strain gradients. [4][5][6][7][8][9][10][11][12][13][14][15][16][17] According to this picture, the hardness increases with decreasing depth of indentation because the total length of geometrically necessary dislocations forced into the solid by the self-similar indenter scales with the square of the indentation depth, while the volume in which these dislocations are found scales with the cube of the indentation depth. This leads to a geometrically necessary dislocation density that depends inversely on the depth of indentation.…”
Section: Introductionmentioning
confidence: 99%
“…This indentation size effect (ISE) has been explained using the concept of geometrically necessary dislocations (GNDs) and strain gradients. [4][5][6][7][8][9][10][11][12][13][14][15][16][17] According to this picture, the hardness increases with decreasing depth of indentation because the total length of geometrically necessary dislocations forced into the solid by the self-similar indenter scales with the square of the indentation depth, while the volume in which these dislocations are found scales with the cube of the indentation depth. This leads to a geometrically necessary dislocation density that depends inversely on the depth of indentation.…”
Section: Introductionmentioning
confidence: 99%
“…Various authors who reported about such experiments [5][6][7][8][9][10] observed that for most annealed single-crystals, such as Cu, W, Fe, Al, or NiAl, distinct pile-up patterns occur only in certain directions around the indentation depending on the crystallographic orientation of the single-crystal [5][6][7][8][9][10]. Very detailed atomistic simulations about the incipient stages of nanoindentation in face centered cubic single crystals were recently conducted by Li et al [11] and Van Vliet et al [12].…”
Section: Introductionmentioning
confidence: 99%
“…Unfortunately, in situ identification of the spatial location and character of the first dislocation is not possible, 12,13 which precludes direct comparison with experiment. Although experimental loaddisplacement results are readily available, 14 the current method only yields the characteristics of the initial dislocation in a perfect crystal, rather than predicting the full plastic behavior involving many dislocations. However, our analysis clearly demonstrates that DFT-and EAM-based calculations lead to sharply different dislocation emission results.…”
mentioning
confidence: 99%
“…The first dislocations obtained with both the EAM and DFT-LQC lie within the upper bound provided by the elastic-plastic boundary obtained experimentally for Al(100) via atomic force microscopy. 14 In closing, some of the limitations and possible extensions of the method are noteworthy. The Cauchy-Born rule, as used in the present implementation of the method, does not permit the description of lattice defects such as dislocations.…”
mentioning
confidence: 99%