Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Ahn, Geun Ho; White, Alexander D.; Kim, Hyungjin; Higashitarumizu, Naoki; Mayor, Felix M.; Herrmann, Jonathan; Jiang, Wentao; Multani, Kevin; Javey, Ali; Vučković, Jelena

doi:10.1364/optica.475387

Cited by 8 publications

(4 citation statements)

References 37 publications

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“…Doped LT-TLP III–V can serve as an epi-ready spot for subsequent homo/heteroepitaxial III–V growth, enabling the development of various quantum structures through MBE or MOCVD. We believe that this novel approach to integrate III–V materials on LiNbO 3 on an insulator platform will pave the way to realizing various semiconductor-based lasers and photodetectors with versatile scalability. − …”

Section: Discussionmentioning

confidence: 99%

Monolithic Growth of Patternable III–V on LiNbO₃

Chae,

Wu,

et al. 2024

Crystal Growth & Design

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Developing cost-effective III−V integration has posed a critical challenge in integrated photonics. To date, the integration of III−V with LiNbO 3 has been demonstrated through epitaxial transfer or wafer bonding; however, challenges persist in terms of both cost and alignment. In this paper, we demonstrated various patterned single-crystalline III−V mesas achieved through low-temperature templated liquid-phase (LT-TLP) growth on LiNbO 3 . Both electrical and optical characterizations reveal the distinctive quality of III−V even without using lattice-matched substrates. InAs on LiNbO 3 shows high electron mobility (2500 cm 2 / V•s) at room temperature, while InP on LiNbO 3 displays uniform photoluminescence and the ability to tune the optical properties of the grown material through in situ doping. We project that the reported LT-TLP monolithic III−V growth on LiNbO 3 reported here will prove beneficial in designing photonic devices such as photon generation and detection or gain materials.

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Section: Discussionmentioning

confidence: 99%

Monolithic Growth of Patternable III–V on LiNbO₃

Chae,

Wu,

et al. 2024

Crystal Growth & Design

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“…Most of the photodetectors integrated on SiN waveguides reported in literature were based on bonded or transfer-printed III–V semiconductors, , Ge monolithically grown on Si, , and two-dimensional materials, , approaches that result in increased integration complexity. Integration of evaporated amorphous and polycrystalline photoconductors has also been demonstrated, offering promising pathways for less complex heterogeneous integration. However, such photoconductors have been associated with the observation of a notable dark current and low detectivity, , attributed to the inherent photoconductor mechanism.…”

Section: Discussionmentioning

confidence: 99%

“…Integration of evaporated amorphous and polycrystalline photoconductors has also been demonstrated, offering promising pathways for less complex heterogeneous integration. However, such photoconductors have been associated with the observation of a notable dark current and low detectivity, , attributed to the inherent photoconductor mechanism. Here, we have demonstrated the formation of QD-based photodiodes on SiN waveguides by means of standard film deposition and patterning techniques.…”

Section: Discussionmentioning

confidence: 99%

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

Pang,

Deng,

Kheradmand

et al. 2023

ACS Photonics

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Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.

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“…Moreover, the performance of these photodetectors needs further improvement, for example, to enhance dark current performance and responsivity. 11,12 Alternatively, the direct deposition on Si of GeSn alloys, [13][14][15][16] III-V quantum dots, 17 or poly-crystalline tellurium thin films 18 can result in cost-effective photodetectors with straightforward fabrication processes. However, the current implementations of these methods result in photodetectors with high dark current and low responsivity, necessitating further development.…”

Section: Introductionmentioning

confidence: 99%

A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µm

Pang,

Deng,

Kheradmand

et al. 2024

APL Photonics

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Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 µm wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots present a promising solution here, offering distinct advantages, such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 µm, a low dark current of only 106 nA, and a bandwidth of 1.1 MHz under a −3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 µm wavelength range.

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Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Cited by 8 publications

References 37 publications

Monolithic Growth of Patternable III–V on LiNbO₃

Monolithic Growth of Patternable III–V on LiNbO₃

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µm

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Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Cited by 8 publications

References 37 publications

Monolithic Growth of Patternable III–V on LiNbO3

Monolithic Growth of Patternable III–V on LiNbO3

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 µm

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Product

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Monolithic Growth of Patternable III–V on LiNbO₃

Monolithic Growth of Patternable III–V on LiNbO₃