Platform for in-planeZTmeasurement and Hall coefficient determination of thin films in a temperature range from 120 K up to 450 K

Abstract

Abstract

Complete Thermoelectric Characterization of PEDOT:PSS Thin Films with a Novel ZT Test Chip Platform

“…Among others, this setup consists of two thin metallic stripes, which are connected in a 4‐wire configuration (PADs 7, 10, 11, 12, 13, and 14) and are used as heater and temperature sensor simultaneously. For the measurement, an adjustable current is applied to the stripes, resulting in a temperature rise and consequently a heat flux from the stripe to the surrounding bulk silicon, which acts as a heat sink . The thermal conductivity can then be calculated from the applied heating power and measured temperature rise of the heating stripe, using a suitable heat flux model for the used setup …”

“…The measurements have been performed with a previously published, chip based, measurement platform for the nearly simultaneous in‐plane ZT characterization of a single thin film sample . ZT is a dimensionless Figure of Merit, which is defined as follows: where σ equals the electrical conductivity, S the Seebeck coefficient, λ the thermal conductivity, and T the temperature in Kelvin (K).…”

“…The Seebeck coefficient is measured using a partly passivated Al 2 O 3 resistance thermometer, located on top of the larger Si 3 N 4 membrane (see Figure a). A more detailed description of the used measurement technique can be found in a later section and in reference …”

Thin Film Tin Selenide (SnSe) Thermoelectric Generators Exhibiting Ultralow Thermal Conductivity

“…Thermal conductivity was performed using the 3-omega Völklein method with a Linseis Thin Film Analyzer. [48][49][50] Samples were prepared by thermal evaporation of SnSe onto prepatterned test chips (Linseis Messgeraete GmbH). [49] The silicon test chips have a surface termination of silicon nitride, then aluminum oxide.…”

“…[48][49][50] Samples were prepared by thermal evaporation of SnSe onto prepatterned test chips (Linseis Messgeraete GmbH). [49] The silicon test chips have a surface termination of silicon nitride, then aluminum oxide. Thermal conductivity measurements were made in an area where the silicon substrate was etched away to leave a SiN/Al 2 O 3 membrane ≈130 nm thick, and the measurement was in-plane.…”