Rapid thermal processing (RTP) induced vacancy-oxygen (VO m m C 2) complexes can act as the precursors for oxide precipitate nucleation thus enhancing oxygen precipitation (OP) in Czochralski silicon (Cz-Si). In our preceding work, we have reported that 10 20 cm -3 germanium (Ge)-doping in Cz-Si facilitates the formation of VO m complexes during the high temperature RTP. Then, how the even higher Ge-doping at 10 21 cm -3 in Cz-Si affects the formation of VO m complexes during the RTP is an interesting issue to be addressed. Actually, such high Ge-doping in Cz-Si forms Cz-Si 1-x Ge x alloys. In the present work, we have investigated the formation of VO m complexes in Cz-Si 1-x Ge x (x = 0.035-0.038) wafers subjected to the high temperature RTP. The Cz-Si 1-x Ge x wafers are found to exhibit much weaker OP than Cz-Si counterparts when subjected to the same two-step (nucleation-growth) anneal following the high temperature RTP, indicating that the formation of VO m complexes during the RTP is suppressed in Cz-Si