Platinum silicide formation on Si1−yCy epitaxial layers

Lee, Kan-Rong; Lin, I-Ping; Chang, Hung-Tai; Lee, Sheng‐Wei

doi:10.1016/j.jallcom.2013.05.157

Cited by 5 publications

(1 citation statement)

References 31 publications

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“…The incorporation of C in the Si lattice has also been shown to reduce 'transient enhanced diffusion ' [3]. This property has been utilized in various silicide applications such as increasing the maximum anneal temperature of Pt and Ni silicides [4,5] as well as reducing the Schottky barrier height with the aim to significantly reduce contact resistance [6].…”

Section: Introductionmentioning

confidence: 99%

Analysis of surface defects in Si_1−yC_yepilayers formed by the oversaturation of carbon

Colston

Myronov

Rhead

et al. 2015

Semicond. Sci. Technol.

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Strained Si 1−y C y epilayers have been grown on Si (001) by reduced pressure chemical vapor deposition, using low-cost precursors disilane and trimethylsilane. Substitutional C incorporation has been achieved in strained epilayers up to y=1.5%, while higher C content of at least 2.4% is observed in relaxed layers. These results are comparable to the highest concentrations achieved using more highly reactive, but expensive, precursors. These relatively high C content epilayers were found to form defects throughout growth attributed to the clustering of C adatoms, which result in localized accelerated amorphous growth and, consequently, hillocks forming on the epilayer surface. The formation, size and distribution of these surface defects has been analyzed through the use of various microscopic techniques. The size and density of these structural defects increases with both C content and epilayer thickness. In our layers of fixed growth time, substitutional C compositions above 1.5% causes hillocks to fuse on the surface; subsequently amorphous growth occurs, which forms an amorphous layer over the crystalline Si 1 −y C y epilayer and hence prevents further epitaxy or reliable device fabrication. The results of this investigation suggest that substitutional C composition of below 1.5% could be achieved without the need for expensive and volatile precursors or complex growth processes, assuming sufficiently thin layers are grown.

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Section: Introductionmentioning

confidence: 99%

Analysis of surface defects in Si_1−yC_yepilayers formed by the oversaturation of carbon

Colston

Myronov

Rhead

et al. 2015

Semicond. Sci. Technol.

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Synthesis and thermal stability of Pt3Si, Pt2Si, and PtSi films grown by e-beam co-evaporation

Fryer

Lad

2016

Journal of Alloys and Compounds

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a b s t r a c tPlatinum silicide thin films formed via solidesolid reaction of PteSi interfaces play an important role as interconnects in microelectronics. This "self-aligned" silicide formation, however, is diffusion-limited and only Pt 2 Si and PtSi phases form. Also, their usefulness in electronic applications at high temperatures is limited due to agglomeration effects. Here, e-beam co-evaporation is presented as a means of fabricating well-defined films of Pt 3 Si as well as the Pt 2 Si and PtSi phases familiar to conventional, self-aligned silicide technology. PteSi films with a range of compositions (silicon atomic fractions of X Si ¼ 0.00 e0.77) were grown on r-sapphire substrates by co-deposition of independently controlled Pt and Si evaporant fluxes at 400 C. Phase, morphology, and electronic properties were analyzed upon deposition and after vacuum annealing for 48 h at 1000 C. As-deposited films with X Si < 0.70 are polycrystalline and at higher Si concentrations are fully amorphous. Valence spectra from Pt, Pt 2 Si, and PtSi films confirm previous reports and a valence spectrum is presented for the stoichiometric Pt 3 Si phase; these data provide experimental support for recently proposed revisions to the standard transition metalesilicon bonding model. As-deposited films, nominally 200 nm thick, are electrically conductive in the range 0.1 e4.0 Â 10 6 S/m and remain so after vacuum annealing for 48 h at 1000 C. The phase, morphological, and electrical stabilities are attributed to the finely grained as-deposited morphologies of co-evaporated Pt silicide films, which hinder agglomeration at 1000 C for much greater times than do morphologies of traditional, self-aligned silicides grown via solid-state reaction.

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Dry synthesis of single-nanometer-scale Pt Si fine particles for electrocatalysis

Todoroki

Takahashi

Kawaguchi

et al. 2020

Journal of Electroanalytical Chemistry

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Platinum silicide formation on Si1−yCy epitaxial layers

Cited by 5 publications

References 31 publications

Analysis of surface defects in Si_1−yC_yepilayers formed by the oversaturation of carbon

Analysis of surface defects in Si_1−yC_yepilayers formed by the oversaturation of carbon

Synthesis and thermal stability of Pt3Si, Pt2Si, and PtSi films grown by e-beam co-evaporation

Dry synthesis of single-nanometer-scale Pt Si fine particles for electrocatalysis

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Platinum silicide formation on Si1−yCy epitaxial layers

Cited by 5 publications

References 31 publications

Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon

Analysis of surface defects in Si1−yCyepilayers formed by the oversaturation of carbon

Synthesis and thermal stability of Pt3Si, Pt2Si, and PtSi films grown by e-beam co-evaporation

Dry synthesis of single-nanometer-scale Pt Si fine particles for electrocatalysis

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Analysis of surface defects in Si_1−yC_yepilayers formed by the oversaturation of carbon

Analysis of surface defects in Si_1−yC_yepilayers formed by the oversaturation of carbon