Platinum Silicide Schottky-Barrier IR-CCD Image Sensors

Kimata, Masafumi; Denda, Masahiko; Fukumoto, T.; Tsubouchi, N.; Uematsu, S.; Shibata, H.; Higuchi, Takaichi; Saheki, T.; Tsunoda, Reikichi; Kanno, Toshio

doi:10.7567/jjaps.21s1.231

Cited by 34 publications

(5 citation statements)

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“…The highest performing SBDs to date feature very thin silicide layers, leading to relatively simple backside-illuminated architectures with incomplete absorption outperforming novel resonant and waveguide architectures. Improved QE in thin silicide layers was first reported by Kimata et al [6] in PtSi where they found a thin 9 nm silicide (the thinnest device tested in that work) exhibited the highest QE. Higher performance was subsequently reported for PtSi layers as thin as 2 nm [25].…”

Section: Background and Motivationsupporting

confidence: 61%

“…100 μm square top contact bond pads and large area ground metal surrounding the detector are wire bonded to a ceramic chip carrier for device testing. mean-free path [6], [29]. Despite the age of this fundamental knowledge, very few reports of SBDs with thickness below 10 nm exist, and to our knowledge thickness dependence on QE has been systematically studied and reported for PtSi alone (3-5 μm wavelength).…”

Section: Background and Motivationmentioning

confidence: 99%

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Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness

Duran

Sarangan

2019

IEEE Photonics J.

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In this paper we show that the internal quantum efficiency of NiSi Schottky-barrier photodetectors can be significantly improved as the silicide film thickness is reduced close to its percolation threshold. We fabricated photodetectors in two optical configurations (frontside and backside illuminated) at four different film thicknesses between 1-4 nm as well as a thick (100 nm) reference device. We simultaneously fit the reflection and transmission data for each silicide film on silicon as well as for front and backside illuminations to extract the refractive index dispersion of each film. Using this technique, we can accurately determine the absorption of each constituent layer and extract the wavelength-dependent internal quantum efficiency from the external quantum efficiency. We show that the internal quantum efficiency is highly dependent on the silicide film thickness while the dark current is not. The internal quantum efficiency of our thinnest detector is the highest reported of any silicide Schottky-barrier photodetector of comparable barrier height to date with a 57× improvement over the thick (reference) device. Using an approximation to Vickers' model, we were able to fit the IQE spectra to extract the hot carrier mean-free path of electrons in NiSi.

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Section: Background and Motivationsupporting

confidence: 61%

Section: Background and Motivationmentioning

confidence: 99%

Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness

Duran

Sarangan

2019

IEEE Photonics J.

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“…The IR detection process occurs by internal photoemission, and its efficiency depends in part on the thickness of the PtSi layer. 8 The IR photon is absorbed in the PtSi layer, producing an electron whose energy is above the Fermi level and the creation of a hole below the Fermi level. If the hole energy is below the Schottky barrier potential l'msec, an electron from the semiconductor can tunnel into the silicide to fill this vacancy.…”

Section: Ptsi Schottky Array Architecturementioning

confidence: 99%

Evaluation of a PtSi Schottky infrared CCD for astronomy

et al. 1984

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This paper presents the results of a preliminary evaluation of a platinum silicide (PtSi) Schottky CCD as an imaging array for astronomical applications. The work was done in the near-infrared (1.2 ,um < X < 2.5 ,um) spectral regime, where there is presently a lack of commercially available panoramic arrays with acceptable performance. During an initial test run, the array detected a star of magnitude 3.5 using an integration time of 128 msec. Proper optimization of the readout electronics, cryostat configuration, and matching of the telescope image scale to the pixel size could allow detection of a source-100 times fainter in a 1-sec integration time. This paper will discuss the array architecture, measurement and signal processing techniques, and the observatory and laboratory evaluation tests.

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“…2. (8) Even though it is a low-resolution dotted image, this result was sufficiently promising. It is an uncorrected image with which we confirmed the high uniformity of the PtSi SB detector.…”

Section: Beginningmentioning

confidence: 89%

Microfluidic Device for Enzyme-Linked Immunosorbent Assay (ELISA) and Its Application to Bisphenol A Sensing

2014

Sensors and Materials

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Almost 40 years have passed since I started in infrared focal plane array (IRFPA) research and development at Mitsubishi Electric Corporation in 1980. Although our path was not in the mainstream, we developed original IRFPA technologies and fabricated products with our IRFPAs for both cooled and uncooled devices. In this paper, I introduce our accomplishments, including PtSi Schottky-barrier (SB) IRFPAs and silicon-on-insulator (SOI) diode uncooled IRFPAs.

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Platinum Silicide Schottky-Barrier IR-CCD Image Sensors

Cited by 34 publications

References 0 publications

Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness

Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness

Evaluation of a PtSi Schottky infrared CCD for astronomy

Microfluidic Device for Enzyme-Linked Immunosorbent Assay (ELISA) and Its Application to Bisphenol A Sensing

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