Mod. Electron. Technol.
 2018
DOI: 10.26549/met.v2i2.850
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Platinum Silicide-Silicon Schottky Diode Characteristics

S. N. Musaeva1,
E. A. Kerimov2,
Nasimi Kazimov3
et al.

Abstract: Abstrat: Photoelectric measurements are used to obtain additional information on the transportation mechanism of Schottky barrier structures.The main purpose of the study is to investigate the photoelectric properties of Shottky diodes based on PtSi - n - Si and PtSi - p - Si contacts.

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