PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation

Pico, Carey A.; Lieberman, M. A.; Cheung, N.W.

doi:10.1007/bf02670923

Cited by 20 publications

(2 citation statements)

References 20 publications

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“…The subject of plasma boundary layer is nearly as old as the subject of plasma body and is very important in many fields of plasma physics and plasma technology including fusion researches, plasma diagnostics and material plasma processing [1][2][3][4]. For example, in plasma immersion ion implantation (PIII) that is an effective technique for semiconductor fabrication and material processing, knowing the structure of plasma boundary layer plays the main role [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Full structure of the thermal plasma including the ion isothermal drag

Khoram

Masoudi

2020

J Theor Appl Phys

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In order to study the ion temperature effect on the space-charge structure and the plasma variables on the wall, the ion thermal force has been added to the ion motion equation in the plasma fluidal model. In the eigenvalue problem of plasma, the plasma equations are numerically solved in a whole area from the plasma center to the wall and it is displayed that the ion temperature has significant effects on the plasma structure and floating variables. However, the fluidal theory of plasmas introduces a singular point among the space charge of plasma boundary layer if the static pressure and the inertial mass of the thermal ions are taken into account at the same time. Finding a full numerical solution for the thermal plasma equations needs to cross the singular point. The singular point and how crossing the point will be depicted too.

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Section: Introductionmentioning

confidence: 99%

Full structure of the thermal plasma including the ion isothermal drag

Khoram

Masoudi

2020

J Theor Appl Phys

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“…Plasma immersion ion implantation (PIII) [1,2] has been shown to be an effective technique for semiconductor fabrication and material processing [3][4][5][6]. It emulates conventional ion-beam ion implantation (IBII) in a number of areas.…”

Section: Introductionmentioning

confidence: 99%

Influence of ion-neutral collision parameters on dynamic structure of magnetized sheath during plasma immersion ion implantation

Khoram

Ghomi

2016

J Theor Appl Phys

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A cold magnetized plasma sheath is considered to examine the gas pressure effect on the sheath dynamics. A fluid model is used to describe the plasma sheath dynamic. The governing fluid equations in the plasma are solved from plasma center to the target using the finite difference method and some convenient initial and boundary conditions at the plasma center and target. It is found that, the ion-neutral collision has significant effect on the dynamic characteristics of the high-voltage sheath in the plasma immersion ion implantation (PIII). It means that, the temporal profile of the ion dose on the target and sheath width are decreased by increasing the gas pressure. Also, the gas pressure substantially diminishes the temporal psychograph of ion incident angle on the target.

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Semiconductor processing with plasma implantation

Cheung

1993

Nuclear Instruments and Methods in Physics Research Section B:

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PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation

Cited by 20 publications

References 20 publications

Full structure of the thermal plasma including the ion isothermal drag

Full structure of the thermal plasma including the ion isothermal drag

Influence of ion-neutral collision parameters on dynamic structure of magnetized sheath during plasma immersion ion implantation

Semiconductor processing with plasma implantation

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