Point-contact enabled reliable and low-voltage memristive switching and artificial synapse from highly transparent all-oxide-integration

Kumar, Mohit; Shin, Heecheol; Choi, Hyobin; Park, Jiyong; Kim, Sangwan; Seo, Hyungtak

doi:10.1016/j.jallcom.2020.157593

Cited by 7 publications

(6 citation statements)

References 36 publications

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“…These preferential conductive paths act as sustainable channels when the voltage polarity of c-AFM tip is changed from the positive to negative values. 31 Typical profiles of the selected conductive filaments are depicted and analyzed in Figure 2b, confirming that the higher applied voltage results in the increase of conductance at TiO 2 /Ni heterostructure. Cyclic I−V curves of semiconductor film are collected from the several points on the current map image of samples.…”

Section: Resultssupporting

confidence: 59%

“…The increase of tip voltage is accompanied by the elevation of the current levels of conductive channels from 0.6 nA at +0.5 V to 10.0 nA at +5.0 V. Concurrently, the formation of new conductive channels is spotted following the increase of the applied tip voltage (Figure S5). These preferential conductive paths act as sustainable channels when the voltage polarity of c-AFM tip is changed from the positive to negative values . Typical profiles of the selected conductive filaments are depicted and analyzed in Figure b, confirming that the higher applied voltage results in the increase of conductance at TiO 2 /Ni heterostructure.…”

Section: Resultsmentioning

confidence: 99%

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Dynamic Self-Rectifying Liquid Metal–Semiconductor Heterointerfaces: A Platform for Development of Bioinspired Afferent Systems

Akbari

Zhuiykov

2021

ACS Appl. Mater. Interfaces

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The assembly of geometrically complex and dynamically active liquid metal/semiconductor heterointerfaces has drawn extensive attention in multidimensional electronic systems. In this study the chemovoltaic driven reactions have enabled the microfluidity of hydrophobic galinstan into a three-dimensional (3D) semiconductor matrix. A dynamic heterointerface is developed between the atomically thin surface oxide of galinstan and the TiO 2 −Ni interface. Upon the growth of Ga 2 O 3 film at the Ga 2 O 3 − TiO 2 heterointerface, the partial reduction of the TiO 2 film was confirmed by material characterization techniques. The conductance imaging spectroscopy and electrical measurements are used to investigate the charge transfer at heterointerfaces. Concurrently, the dynamic conductance in artificial synaptic junctions is modulated to mimic the biofunctional communication characteristics of multipolar neurons, including slow and fast inhibitory and excitatory postsynaptic responses. The self-rectifying characteristics, femtojoule energy processing, tunable synaptic events, and notably the coordinated signal recognition are the main characteristics of this multisynaptic device. This novel 3D design of liquid metal−semiconductor structure opens up new opportunities for the development of bioinspired afferent systems. It further facilitates the realization of physical phenomena at liquid metal− semiconductor heterointerfaces.

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Section: Resultssupporting

confidence: 59%

Section: Resultsmentioning

confidence: 99%

Dynamic Self-Rectifying Liquid Metal–Semiconductor Heterointerfaces: A Platform for Development of Bioinspired Afferent Systems

Akbari

Zhuiykov

2021

ACS Appl. Mater. Interfaces

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“…Therefore, it can be judged that the current has a linear relationship with the voltage in the LRS, which conforms to ohmic conduction . The slope of the curve is divided into two parts at HRS: the slopes of the first part are 0.88, 1.02, 1.11, and 1.12, respectively, which is linear and belongs to ohmic conduction; the slopes of the second part are 1.85, 1.49, 2.29, and 3.81, respectively, which are consistent with the space charge trap theory (SCLC). , Under the excitation of a high voltage, the number of oxygen vacancies in GO increases, enhancing the space charge trapping ability. The internal composition of the GM is relatively complex, containing most of the proteins found in nature (such as soy protein and soy protein isolate) and 18 kinds of amino acids (such as aspartic acid and glutamic acid) …”

Section: Resultsmentioning

confidence: 99%

Nonvolatile Bioresistive Random Access Memory Based on Glycine max and Graphene Oxide

Wang,

Li,

et al. 2023

ACS Appl. Electron. Mater.

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Devices that realize memory functions and simulate synaptic characteristics are an important part of realizing artificial neural networks. In this article, a bioresistive random access memory based on Glycine max and graphene oxide (GO) is proposed. The devices can simulate the potentiation and depression of synapses under pulsed voltage stimulation. The device has different low resistance values under different compliance currents, which can realize multilevel data storage (4 levels, 2 bits) on the same cell. With the change in GO concentration, the ON/OFF current ratio of the devices can be adjusted in the range of 10− 10 4 . Since the minimum operating voltage is ±1 V, the power consumption of the devices is low. Multilevel tunable nonvolatile resistive random access memory has great potential in data storage and artificial synapses in the future.

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“…The performance of the device would be improved with the probe acting as the top electrode by using CAFM and finite element simulations (figure 6(d)). In the case of probe contact, the filament would be positioned and well confined, suggesting that point contact could ultimately provide a unique way to design high-performance devices [143]. Recently, Hui Fei et al provided a new method to explore nano-synaptic plasticity at the nanoscale.…”

Section: Cafm-assisted Neuromorphic Computingmentioning

confidence: 99%

Probing switching mechanism of memristor for neuromorphic computing

Yang

Zhang

et al. 2023

Nano Ex.

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In recent, neuromorphic computing has been proposed to simulate the human brain system to overcome bottlenecks of the von Neumann architecture. Memristors, considered emerging memory devices, can be used to simulate synapses and neurons, which are the key components of neuromorphic computing systems. To observe the resistive switching (RS) behavior microscopically and probe the local conductive filaments (CFs) of the memristors, conductive atomic force microscopy (CAFM) with the ultra-high resolution has been investigated, which could be helpful to understand the dynamic processes of synaptic plasticity and the firing of neurons. This review presents the basic working principle of CAFM and discusses the observation methods using CAFM. Based on this, CAFM reveals the internal mechanism of memristors, which is used to observe the switching behavior of memristors. We then summarize the synaptic and neuronal functions assisted by CAFM for neuromorphic computing. Finally, we provide insights into discussing the challenges of CAFM used in the neuromorphic computing system, benefiting the expansion of CAFM in studying neuromorphic computing-based devices.

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Point-contact enabled reliable and low-voltage memristive switching and artificial synapse from highly transparent all-oxide-integration

Cited by 7 publications

References 36 publications

Dynamic Self-Rectifying Liquid Metal–Semiconductor Heterointerfaces: A Platform for Development of Bioinspired Afferent Systems

Dynamic Self-Rectifying Liquid Metal–Semiconductor Heterointerfaces: A Platform for Development of Bioinspired Afferent Systems

Nonvolatile Bioresistive Random Access Memory Based on Glycine max and Graphene Oxide

Probing switching mechanism of memristor for neuromorphic computing

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