Point Defect Generation During Si Oxidation and Oxynitridation

Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

“…15,16,18 This individual diffusion behavior found also a variety of applications in Si MOS technology. 13,14,17,18,19 However, such a study in the case of germanium is, to our knowledge, still missing.…”

“…In this context the study of anomalous diffusion phenomena of implanted species (apart for common dopants) could monitor indirectly Ge point defects kinetics and interactions with the Ge surface or thin films/Ge interfaces for an understanding of fundamental Ge point defects properties. Nitrogen implantation and diffusion in inert and oxidizing ambient has been extensively studied in silicon [13][14][15][16][17][18][19][20][21][22] where anomalous (non-Fickian) diffusion phenomena takes place at temperatures above 700 • C. Diffusion occurs toward the free Si surface or a SiO 2 /Si interface and is attributed to nitrogen atoms -Si z E-mail: dskar@physics.upatras.gr interstitials interactions as also to the interaction of Si interstitilas with the free Si surface or the SiO 2 /Si interface. 15,16,18 This individual diffusion behavior found also a variety of applications in Si MOS technology.…”