Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

Sudo, Haruo; Nakamura, Kozo; Maeda, Susumu; Okamura, Hideyuki; Izunome, Koji; Sueoka, Koji

doi:10.1149/2.0121901jss

Cited by 5 publications

(8 citation statements)

References 21 publications

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“…The inclusion of a pre-step at temperatures >1210 C in an Ar/O 2 ambient before nitriding is useful as the wafer can further homogenize and increase the BMD-denuded zone, as small grown-in BMDs (≤12 nm) are dissolved near the surface and in the bulk. This dissolution of BMD nuclei starts lower in temperature as described by Sudo et al [17,18] and Araki et al, respectively. [14,15]…”

Section: Discussionmentioning

confidence: 64%

“…They found the critical BMD nuclei diameters for process conditions at 1250 C, 30 s to be %10 nm, respectively for 1300 C, 15 s (both ambient types: pure O 2 ) to be %19 nm needed to survive the RTA. In a more recent and comprehensive work by them, [18] they studied several thermal oxidizing processes on silicon wafer surfaces between 900 and 1350 C. The oxidizing RTA was done at even lower O 2 vol. ratios down to 3% at 1300 C and 10% at 1250 C. They were able to show that the Si interstitial supersaturation followed, in general, an Arrhenius plot for the aforementioned temperature range.…”

Section: Introductionmentioning

confidence: 99%

“…They found the critical BMD nuclei diameters for process conditions at 1250 °C, 30 s to be ≈10 nm, respectively for 1300 °C, 15 s (both ambient types: pure O 2 ) to be ≈19 nm needed to survive the RTA. In a more recent and comprehensive work by them, they studied several thermal oxidizing processes on silicon wafer surfaces between 900 and 1350 °C. The oxidizing RTA was done at even lower O 2 vol.…”

Section: Introductionmentioning

confidence: 99%

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Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

Müller¹,

Gehmlich²,

Sattler³

et al. 2019

Physica Status Solidi (a)

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Rapid thermal annealing (RTA) can be applied to dissolve small defects such as voids or small-sized oxygen precipitates and to manipulate vacancies in a specific depth from the surface. This can be achieved at elevated temperatures around 1300 C and via NH 3 dissociation at the surface at temperatures >1150 C. In an earlier study (Araki et al., 2013), it had been demonstrated already that even under oxidizing ambient, enhanced bulk micro defects formation around 1300-1350 C can occur. The near-surface region is monitored via its homogeneity of precipitation and in-depth vacancy profiling by Pt-diffusion. Simulations of defect dissolution during RTA processes are performed up to 1290 C under different ambient. The size-dependent defect dissolution behavior is predicted and verified by measurement of the gate oxide integrity.

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Section: Discussionmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

Müller¹,

Gehmlich²,

Sattler³

et al. 2019

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…In most models for thermal oxidation, the self-interstitial supersaturation at the silicon/oxide interface is a function of the growth rate of the oxide layer. 1,5,6,27 With increasing temperature the self-interstitial supersaturation decreases. 27 We have chosen a deposition method for silicon oxide and not a thermal oxidation.…”

Section: Discussionmentioning

confidence: 99%

“…This would work only in the case that all samples used are of the same initial concentration of interstitial oxygen as it was done in Ref. 27. Voronkov and Falster 28 also found a correlation of the BMD density with the third power of vacancies but they did not provide information about C Oi .…”

Section: N82mentioning

confidence: 96%

On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon

Kissinger

Kot

Lisker

et al. 2019

ECS J. Solid State Sci. Technol.

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PECVD oxide layers with different layer stress ranging from about −305.2 MPa to 39.9 MPa were deposited on silicon wafers with similar concentration of interstitial oxygen. After a thermal treatment consisting of rapid thermal annealing (RTA) and furnace annealing 780°C 3 h + 1000°C 16 h in nitrogen the profiles of the oxide precipitate density were investigated. Supersaturations of self-interstitials as function of layer stress were determined by adjusting modelling results to measured depth profiles of bulk microdefects. The self-interstitial supersaturation generated by RTA at 1250°C and 1175°C at the silicon/oxide interface is increasing linearly with increasing layer stress. Values for self-interstitial supersaturation determined on deposited oxide layers after RTA at 1250°C and 1175°C are very similar to values published for RTO by Sudo et al. An RTA at 1175°C with a PECVD oxide on top of the wafer is a method to effectively suppress oxygen precipitation in silicon wafers. Nucleation anneals carried out at 650°C for 4 h and 8 h did not show any effect of PECVD oxide layers on oxide precipitate nucleation.

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Formation behavior of oxygen precipitates in silicon wafers subjected to ultra-high-temperature rapid thermal process

Sudo¹,

Nakamura

Okamura³

et al. 2022

Journal of Applied Physics

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In this study, we investigated the formation behavior of oxygen precipitates in Si wafers after a rapid thermal process (RTP) at 1350 °C in an oxygen atmosphere through experiments and simulations. The oxygen precipitate density varied based on the temperature (750–950 °C) and duration (0.5–16 h) of the first step of the two-step heat treatment after RTP. The highest oxygen precipitate density was achieved when the first-step temperature was set to 850 °C, and the second-step temperature was fixed at 1000 °C. The simulation consisted of the calculation of the depth profiles of the residual vacancy concentrations after RTP and oxygen precipitation during the two-step heat treatment after RTP. An empirical formula, in which the nucleation rate of the oxygen precipitates was assumed to be proportional to the fourth power of the residual vacancy concentration, was used in the temperature range of 600–1000 °C. In addition, we assumed that interstitial Si atoms, which were generated by the growth of the oxygen precipitates, consumed the residual vacancies through pair annihilation, thus stopping oxygen precipitation owing to the depletion of the residual vacancies. The simulation effectively reproduced the variations in the oxygen precipitate densities under different conditions in the first step of the heat treatment. Considering the results of the simulation, we concluded that the resulting oxygen precipitate density was determined by the nucleation rate, growth size, and timing of the terminal point of the nucleation.

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Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient

Cited by 5 publications

References 21 publications

Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing

On the Impact of Strained PECVD Oxide Layers on Oxide Precipitation in Silicon

Formation behavior of oxygen precipitates in silicon wafers subjected to ultra-high-temperature rapid thermal process

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