Point defect structure of CdTe〈Cl〉 crystals at high temperatures

Chemical diffusion in CdTe:Cl

“…Cd pressure (atm) is close to the intentional doping of the melt, which is probably caused by a fast solidification and minimized segregation of Cl into melt. Analogous Cl doping of the melt used in [3] resulted in significantly lower [Cl] found in the solid CdTe:Cl. The fitted E A is close to E A = −0.5 eV estimated within the Coulomb model [20].…”

“…The ingot was formed by single-crystalline grains with characteristic dimension of several cm. Samples were cut 1 cm from the end of the ingot, polished and etched to final dimensions 5 × 5 × 1.6 mm 3 .…”

“…Chlorine substituting Te in the anion sublattice (Cl Te ) is often used for this purpose [1,2]. The research of the defect properties of CdTe:Cl is thus needed to understand the defect structure [3] and to optimize the performance of the detectors. The chemical diffusion affects significantly the material homogeneity and electric properties whenever the material is set out of equilibrium at elevated temperature both during the cooling of as-grown crystal and at the post-growth annealing.…”

“…The evaluated [Cl]is close to the intentional doping of the melt, which is probably caused by a fast solidification and minimized segregation of Cl into melt. Analogous Cl doping of the melt used in[3] resulted in significantly lower [Cl] found in the solid CdTe:Cl. The fitted E A is close to E A = −0.5 eV estimated within the Coulomb model[20].As was mentioned above, σ ∝ P 0.5 Cd points to a compensated semiconductor, which slightly converts to an uncompensated material at maximum P Cd .…”