Point Defects in Lithium Fluoride by EUV and Soft X-Rays Exposure for X-Ray Microscopy and Optical Applications

Baldacchini, G.; Bollanti, S.; Bonfigli, F.; Lazzaro, P. Di; Faenov, A. Ya.; Flora, F.; Marolo, T.; Montereali, R. M.; Murra, D.; Nichelatti, E.; Pikuz, T. A.; Reale, A.; Reale, L.; Ritucci, A.; Tomassetti, Giuseppe

doi:10.1109/jstqe.2004.838080

Cited by 21 publications

(25 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This defect center can also be observed in bulk LiF crystals with radiation defects. 29,30 Upon application of a stepped bias voltage (Fig. 7(b)) going from zero to 15 V, we have monitored the temporal intensity of the defect band (see Fig.…”

Section: Electro-optical Characterizationmentioning

confidence: 99%

Electrical conduction of LiF interlayers in organic diodes

Bory

Gomes

Janssen

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

An interlayer of LiF in between a metal and an organic semiconductor is commonly used to improve the electron injection. Here, we investigate the effect of moderate bias voltages on the electrical properties of Al/LiF/poly(spirofluorene)/Ba/Al diodes by systematically varying the thickness of the LiF layer (2-50 nm). Application of forward bias V below the bandgap of LiF (V < Eg ∼ 14 V) results in reversible formation of an electrical double layer at the LiF/poly(spirofluorene) hetero-junction. Electrons are trapped on the poly(spirofluorene) side of the junction, while positively charged defects accumulate in the LiF with number densities as high as 1025/m3. Optoelectronic measurements confirm the built-up of aggregated, ionized F centres in the LiF as the positive trapped charges. The charged defects result in efficient transport of electrons from the polymer across the LiF, with current densities that are practically independent of the thickness of the LiF layer.

show abstract

Section: Electro-optical Characterizationmentioning

confidence: 99%

Electrical conduction of LiF interlayers in organic diodes

Bory

Gomes

Janssen

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…To find the ablation threshold of LiF crystals, we varied EUV-FEL energy and/or changed beam focusing position from the best focus at the surface of a LiF crystal to defocusing from the best focus up to 40 mm. The luminescence of stable color centers (CCs) [6][7][8] formed by EUV-FEL radiation was used to measure the intensity/fluence distribution in SCSS laser focal spots [9]. This is very important as it allows us to define an accurate value of the real local fluence at a target surface, and to find exact values of the ablation threshold.…”

Section: Euv-fel Experiments With Lif Targetmentioning

confidence: 99%

Two‐Temperature Warm Dense Matter Produced by Ultrashort Extreme Vacuum Ultraviolet‐Free Electron Laser (EUV‐FEL) Pulse

Inogamov

Faenov

Zhakhovsky

et al. 2011

Contrib. Plasma Phys.

View full text Add to dashboard Cite

Key words Short EUV and X-ray laser pulse, LiF ablation, material strength in laser experiment.Ultrashort X-ray laser pulse acts onto electron subsystem of dielectrics such as LiF and transfers matter into a two-temperature state with hot electrons excited by the pulse from valence to conduction band. Because of the small heat conduction, the hydrodynamic motion proceeds in adiabatic regime keeping the radiation attenuation depth Datt as the only scale of the spatial heat distribution. Hydrodynamic motion qualitatively changes with absorbed energy increase. At low fluences F ∼ 10mJ/cm 2 a spallative removal of LiF remaining in solid state takes place. This is a reason for the low ablation threshold. The paper presents new experimental findings supporting this conclusion. For the first time these findings are obtained using ultrashort extreme vacuum ultraviolet-free electron laser (EUV-FEL). In the case of high fluence, also achieved in our experiments at EUV-FEL, material removal happens as result of outflow of matter transferred into the gaseous state. This explains the slow growth of the amount of ablated mass with significant fluence increase.

show abstract

“…Here we present a review of the results [3,[5][6][7][8][9][10][11][12][13][14][15][16], obtained by using recently proposed new approach for applying a color center (CC) formation in LiF crystals and films to perform a high quality, single -shot in situ imaging of the near field and the far field measurements of soft X-ray laser (SXRL) beams parameters. Such detectors have submicron spatial resolution [8,9,12,14] and also more stable to direct intense laser radiation compared with the X-ray CCD.…”

Section: Introductionmentioning

confidence: 99%

Using submicron-resolution LiF crystal and film x-ray detectors for the near and far fields in-situ characterization of soft x-ray laser beams

et al. 2012

View full text Add to dashboard Cite

Review of results, obtained by using recently proposed new imaging detector, based on formation of color centers in LiF crystal and LiF film, for in situ high performance measurements of near-field and far-field properties of soft X-ray lasers (SXRL) beams is presented. Experiments have been carried out with laser-driven transient-collision plasma SXRL and free electron SXRL beams. It was demonstrated that due to favorable combination of high spatial resolution, high dynamic range and wide field of view this technique allows measuring not only intensity distribution across the full beam and in local areas, but also permits to evaluate coherence and spectral distribution of radiation across the beam. Experimental diffraction patterns in the images of periodical structures are analyzed by comparison with the modeled ones in the last case. The estimated accuracy of measurements is between 10-20%.

show abstract

Point Defects in Lithium Fluoride by EUV and Soft X-Rays Exposure for X-Ray Microscopy and Optical Applications

Cited by 21 publications

References 56 publications

Electrical conduction of LiF interlayers in organic diodes

Electrical conduction of LiF interlayers in organic diodes

Two‐Temperature Warm Dense Matter Produced by Ultrashort Extreme Vacuum Ultraviolet‐Free Electron Laser (EUV‐FEL) Pulse

Using submicron-resolution LiF crystal and film x-ray detectors for the near and far fields in-situ characterization of soft x-ray laser beams

Contact Info

Product

Resources

About