Polar nature of domain boundaries in purely ferroelastic 
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Yokota, Hiroko; Matsumoto, Shigeji; Salje, Ekhard K. H.; Uesu, Yoshiaki

doi:10.1103/physrevb.100.024101

Cited by 23 publications

(18 citation statements)

References 56 publications

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“…BiVO4 is almost the same as with other ferroelastic materials [19][20][21][22] , and it is around 10 -8 weaker than in normal ferroelectrics, which produce SH signals from the bulk. Except for ferroelastic domain boundaries, no SH signals are detected from the bulk region in BiVO4.…”

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confidence: 80%

“…For example, in CaTiO3 and Pb3(PO4)2 19,22 , we observed that the orientations of SH maxima are slightly different for each domain boundary, especially when the density of domain boundaries is high. We believe that the static interaction between polar domain boundaries plays some contribution in this phenomena.…”

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confidence: 86%

“…could be switchable without interfering with the depolarization field in the bulk. The polarity of domain boundaries has been reported in various oxides [16][17][18][19][20][21][22] with different crystal structures, all of which are insulators in the bulk. To confirm the universality of the polar nature at a ferroelastic domain boundary, experiments using non-insulator materials are crucial.…”

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confidence: 99%

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Direct evidence of polar ferroelastic domain boundaries in semiconductor BiVO4

Yokota

Hasegawa

Glazer

et al. 2020

Applied Physics Letters

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Ferroelastic domain boundaries in semiconductor bismuth vanadate, BiVO4, are examined using second harmonic generation (SHG) microscopy. Although the bulk is centrosymmetric, domain boundaries produce homogeneous SH signals. The polarization dependences of SH intensities exhibite strong anisotropy compatible with the polar symmetry m. The present results are compared with the experimental results of other ferroelastics we have observed so far. Unlike other ferroelastic materials, the directions of the SH maxima are in the same direction for all domain boundaries. Domain boundaries in ferroics are known to exhibit physical properties that do not exist in the bulk. Typical examples are domain boundaries with much higher conductivity than the bulk 1-6 , even being superconducting 7 , charged domain boundaries 8-15 , and polar domain boundaries 16-22. These phenomena have been directly measured by state-of-the-art techniques, such as aberration-corrected transmission microscopy, electron holography, atomic force microscopy etc. The fundamental significance of these phenomena lies in the possible development of new technologies where the domain boundary is the main element of the device. Racetrack memories 23 and logics for electronic circuits 24 are prominent examples of applications, and some of them have been already been achieved by using magnetic domain boundaries. Ferroelastic domain boundaries have several advantages for such future devices 25. Since the width of a ferroelastic domain boundary is much thinner than any magnetic boundaries, a high-density memory device can be realized. In particular, the existence of polar properties at a ferroelastic domain boundary is one of the most promising candidates, because the localized polarization

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confidence: 80%

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confidence: 86%

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confidence: 99%

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Direct evidence of polar ferroelastic domain boundaries in semiconductor BiVO4

Yokota

Hasegawa

Glazer

et al. 2020

Applied Physics Letters

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“…These switches are largely athermal because the energy barriers between different domain states are usually much greater than the thermal energy. It was shown that ferroelastic domain boundaries are generally polar [19][20][21][22][23][24][25]. The first example was CaTiO 3 [19] where polarity was observed in transmission electron microscopy.…”

Section: Introductionmentioning

confidence: 99%

Electrically driven ferroelastic domain walls, domain wall interactions, and moving needle domains

Ding

et al. 2019

Phys. Rev. Materials

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Ferroelastic domains generate polarity near domain walls via the flexoelectric effect. Applied electric fields change the wall dipoles and generate additional dipoles in the bulk. Molecular dynamics simulations show that the thickness of domain walls changes when an electric field is applied to the sample. Fields parallel to the walls lead to expansion of the wall thickness while fields perpendicular to the wall lead to shrinking of the wall thickness. The interactions between polar domain walls expand over more than 45 unit cells, the resulting forces change the wall-wall distances if pinning effects are small. The interaction increases nonlinearly with decreasing wall-wall distances favoring equal wall distances as the consequence of energy minimization under the constraints of a constant number of domain walls. Even for small groups of three walls the sequence of walls is locally periodic: assemblies of three parallel domain walls arrange themselves so that the intermediate domain wall is located exactly in the middle between the two outer walls. The driving force is appreciable if the distance between the outer domain walls is below approximately 30 lattice units. Pairs of domain walls often form needle domains where the shaft of the needle is ca. 3 lattice units wide. The movement of needle domains under applied electric field was simulated. The advancement and retraction of needles is larger in finite samples with charge-free surfaces than under periodic boundary conditions in the bulk. The needle tip moves even more freely when the sample surface is charged.

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“…Ferroelastic materials are defined by their ferroelastic hysteresis 1 in analogy with ferroelectric and ferromagnetic materials and their relevant hysteresis behavior. Additional ferroic properties often emerge when ferroelastic materials show polarity inside their domain boundaries while no such polarity exists in their bulk 2–14 . Non-polar bulk materials like SrTiO 3 and LaAlO 3 show strong local dipoles inside twin walls 15–20 .…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric switching in ferroelastic materials with rough surfaces

Ding

et al. 2019

Sci Rep

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Electric switching of non-polar bulk crystals is shown to occur when domain walls are polar in ferroelastic materials and when rough surfaces with steps on an atomic scale promote domain switching. All domains emerging from surface nuclei possess polar domain walls. The progression of domains is then driven by the interaction of the electric field with the polarity of domain boundaries. In contrast, smooth surfaces with higher activation barriers prohibit effective domain nucleation. We demonstrate the existence of an electrically driven ferroelectric hysteresis loop in a non-ferroelectric, ferroelastic bulk material.

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Polar nature of domain boundaries in purely ferroelastic Pb3(PO4)2 investigate

Cited by 23 publications

References 56 publications

Direct evidence of polar ferroelastic domain boundaries in semiconductor BiVO4

Direct evidence of polar ferroelastic domain boundaries in semiconductor BiVO4

Electrically driven ferroelastic domain walls, domain wall interactions, and moving needle domains

Ferroelectric switching in ferroelastic materials with rough surfaces

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