Polar optical phonons in a semiconductor quantum-well: The complete matching problem

Nieto, J.M.; Comas, F.

doi:10.1016/j.physb.2006.05.347

Cited by 4 publications

(4 citation statements)

References 21 publications

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“…Among these IIVI semiconductors, CdTe/ZnTe systems have attracted much attention for optoelectronic devices with the short wavelength ranges [9] and as devices for spin transfer [1012]. Interband transitions in CdTe/ZnTe square quantum wells have been investigated * corresponding author; e-mail: a.john.peter@gmail.com and determined from optical gain spectra at dierent temperatures by varying well width of CdTe [13].…”

Section: Introductionmentioning

confidence: 99%

Polaron Effects on Nonlinear Optical Properties of a Hydrogenic Impurity in a CdTe/ZnTe Quantum Dot

Parvathi¹,

Peter

2013

Acta Phys. Pol. A

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Hydrogenic donor impurity binding energy is obtained in a ZnxCd1−xTe/ZnTe strained quantum dot taking into account the phonon connement eect. The interaction of the electron and the phonon modes are expressed in terms of the Fröhlich interaction Hamiltonian. The binding energy is obtained for various Zn composition using the AldrichBajaj eective potential. Calculations have been obtained using the Bessel function as an orthonormal basis for dierent connement potentials of barrier height considering the internal electric eld induced by the spontaneous and piezoelectric polarizations. Polaron induced linear and third-order nonlinear optical absorption coecients and the changes of refractive index as a function of incident photon energy are observed. Our results coincide with the recent observations of a hydrogenic impurity binding energy in a CdTe/ZnTe quantum dot solved analytically. It is observed that the potential taking into account the eects of phonon makes the hydrogenic binding energies larger than the obtained results using a Coulomb potential screened by a static dielectric constant and the optical properties of hydrogenic impurity in a quantum dot are strongly aected by the conning potential and the quantum size. It is found that the geometry of the quantum dot, zinc concentration and the eect of phonon have a great inuence on the absorption coecient and refractive index changes of the dot. It is also observed that the magnitude of the absorption coecients enhances with the inclusion of phonon eect.

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Section: Introductionmentioning

confidence: 99%

Polaron Effects on Nonlinear Optical Properties of a Hydrogenic Impurity in a CdTe/ZnTe Quantum Dot

Parvathi¹,

Peter

2013

Acta Phys. Pol. A

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“…The prospect of potential applications of optoelectronic devices utilizing II-VI/II-VI nanostructures based on wide band-gap compound semiconductors has led to substantial research and development efforts to grow various kinds of quantum structures (Peng et al 2000;Tsukazaki et al 2005;Erwin et al 2005;Mackowski et al 2005;Lee et al 2008). Among these II-VI/II-VI quantum structures, CdTe/ZnTe quantum well (QW) system has attracted much attention because of their potential applications for optoelectronic devices operating in the short-wavelength region (Pelekanos et al 1993;Kayanuma et al 2003;Nieto and Comas 2007). Even though many works concerning the growth and the physical properties of CdTe/ZnTe QW structures have been performed (Pelekanos et al 1993;Kayanuma et al 2003;Nieto and Comas 2007), studies on the optical gain of the CdTe/ZnTe QWs have not yet been performed.…”

Section: Introductionmentioning

confidence: 99%

“…Among these II-VI/II-VI quantum structures, CdTe/ZnTe quantum well (QW) system has attracted much attention because of their potential applications for optoelectronic devices operating in the short-wavelength region (Pelekanos et al 1993;Kayanuma et al 2003;Nieto and Comas 2007). Even though many works concerning the growth and the physical properties of CdTe/ZnTe QW structures have been performed (Pelekanos et al 1993;Kayanuma et al 2003;Nieto and Comas 2007), studies on the optical gain of the CdTe/ZnTe QWs have not yet been performed.…”

Section: Introductionmentioning

confidence: 99%

Dependence of optical gain and interband transitions on the CdTe well width and temperature for CdTe/ZnTe single quantum wells

et al. 2009

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Optical gains and interband transition energies for CdTe/ZnTe single quantum wells (SQWs) with different CdTe well widths were investigated. Photoluminescence (PL) spectra for CdTe/ZnTe SQWs at various temperatures were experimentally obtained, and the corresponding optical gains were calculated by using an interacting pair Green's function and by using an energy space integrated function. The peak energies in the gain spectra that take the Coulomb interaction between the electron and the hole into account were in qualitatively reasonable agreement with those determined from the PL spectra.

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“…Strain modifies many important materials properties. In semiconductors, most salient features are affected by strain, including electronic band structure, − electronic transport, optoelectronic properties, phonon structure, and kinetics and thermodynamics of atom motion and structure . In oxides, the existence and extent of structural phases are sensitive to strain: magnetic, dielectric, and superconducting complex oxides can have extremely large responses to applied stresses and fields .…”

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confidence: 99%

Symmetry in Strain Engineering of Nanomembranes: Making New Strained Materials

et al. 2011

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Strain in a material changes the lattice constant and thereby creates a material with new properties relative to the unstrained, but chemically identical, material. The ability to alter the strain (its magnitude, direction, extent, periodicity, symmetry, and nature) allows tunability of these new properties. A recent development, crystalline nanomembranes, offers a powerful platform for using and tuning strain to create materials that have unique properties, not achievable in bulk materials or with conventional processes. Nanomembranes, because of their thinness, enable elastic strain sharing, a process that introduces large amounts of strain and unique strain distributions in single-crystal materials, without exposing the material to the formation of extended defects. We provide here prescriptions for making new strained materials using crystal symmetry as the driver: we calculate the strain distributions in flat nanomembranes for two-fold and four-fold elastically symmetric materials. We show that we can controllably tune the amount of strain and the asymmetry of the strain distribution in elastically isotropic and anisotropic materials uniformly over large areas. We perform the experimental demonstration with a trilayer Si(110)/Si((1-x))Ge(x)(110)/Si(110) nanomembrane: an elastically two-fold symmetric system in which we can transfer strain that is biaxially isotropic. We are thus able to make uniformly strained materials that cannot be made any other way.

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Polar optical phonons in a semiconductor quantum-well: The complete matching problem

Cited by 4 publications

References 21 publications

Polaron Effects on Nonlinear Optical Properties of a Hydrogenic Impurity in a CdTe/ZnTe Quantum Dot

Polaron Effects on Nonlinear Optical Properties of a Hydrogenic Impurity in a CdTe/ZnTe Quantum Dot

Dependence of optical gain and interband transitions on the CdTe well width and temperature for CdTe/ZnTe single quantum wells

Symmetry in Strain Engineering of Nanomembranes: Making New Strained Materials

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