Polarisation-controlled reset-set-flip-flop basedon ordered GaInP

Krauß, J.; Kippenberg, T.; Spieler, J.; Kiesel, P.; Döhler, G. H.; Moser, M.

doi:10.1049/el:19991270

Cited by 6 publications

(3 citation statements)

References 3 publications

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“…2 Several devices, such as polarization-sensitive detectors, threshold switches, and reset-set flip flops, have been demonstrated using this material. 2,3 However, higher-density magneto-optical storage and readout require shorter operating wavelengths. A limitation of In 0.5 Ga 0.5 P is the narrow range of its operating wavelength.…”

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confidence: 99%

Strained M-plane GaN for the realization of polarization-sensitive photodetectors

Ghosh

Brandt

Grahn

2002

Applied Physics Letters

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We theoretically investigate the oscillator strengths of the three band-edge transitions and the resulting polarization anisotropy of the absorption coefficient for an M-plane (͓11 00͔ oriented͒ GaN film as a function of an arbitrary in-plane strain. Light incident normally on an M-plane film can be completely polarized parallel or perpendicular to the unique c axis of wurtzite GaN. We show that for a particular range of M-plane strain, both the wavelength range, over which the polarization anisotropy in the absorption occurs, and its magnitude are enhanced. Consequently, strained M-plane GaN becomes a promising candidate for realizing polarization-sensitive photodetectors. For such an application, we also determine the strain dependence of the operating wavelength characteristics.

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confidence: 99%

Strained M-plane GaN for the realization of polarization-sensitive photodetectors

Ghosh

Brandt

Grahn

2002

Applied Physics Letters

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“…In order to prove that in this case we can approximately describe the polarization filtering or rotation by the absorption coefficient and film thickness alone, we compare in Fig. (10) with the result for ⌽ using the exact relation in Eq. (6) and (10).…”

Section: B Polarization Filteringmentioning

confidence: 98%

“…Figure 8 shows the energy dependence of the measured rotation ⌽ for i =45°and the calculated values. (10) and (12), the polarization angle of the outgoing beam depends on the thickness of the GaN film. (10), = 0, while for Eq.…”

Section: B Polarization Filteringmentioning

confidence: 99%

Polarization filtering by nonpolar M-plane GaN films on LiAlO2

Misra

Sun

Brandt

et al. 2004

Journal of Applied Physics

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Articles you may be interested inAnisotropic strain relaxation and the resulting degree of polarization by one-and two-step growth in nonpolar aplane GaN grown on r-sapphire substrateThe anisotropic optical properties and polarization filtering are investigated for strained M-plane GaN films as a function of the angle of the in-plane polarization vector. Since the c axis of the underlying wurtzite crystal structure lies in the film plane, its symmetry is reduced in comparison to conventional C-plane films, giving rise to an in-plane polarization anisotropy. This anisotropy is further enhanced by the anisotropic compressive in-plane strain, which occurs due to the lattice mismatch between the GaN film and the substrate LiAlO 2 . In addition to linear birefringence, the film also exhibits linear dichroism, resulting in a polarization filtering of an incident, linearly polarized light beam after transmission. This filtering manifests itself as a rotation of the polarization vector towards the c axis and can be as large as 80°. We compare the measured polarization rotation with calculated values taking into account the birefringence of the GaN film. In the energy range where the filtering is most effective, the birefringence almost disappears and can therefore be neglected for the determination of the rotation angle. Finally, the rotation, which is determined by the transmittance for the two orthogonal polarization directions, can be very well approximated by the product of the film thickness and the difference of the absorption coefficients for the two polarization directions.

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