1973
DOI: 10.1103/physrevb.7.4568
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Polariton Reflectance and Photoluminescence in High-Purity GaAs

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Cited by 313 publications
(50 citation statements)
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“…These were first demonstrated in II-VI compounds, and then in GaAs (Fig. 2) in the seminal work by Sell et al [23]. The absorption phenomenon is sharply changed in the polariton picture, as it is due to polariton scattering and no more to the elementary light-matter interaction.…”
Section: The Interplay Of Photon and Electron Dimensionalitiesmentioning
confidence: 94%
“…These were first demonstrated in II-VI compounds, and then in GaAs (Fig. 2) in the seminal work by Sell et al [23]. The absorption phenomenon is sharply changed in the polariton picture, as it is due to polariton scattering and no more to the elementary light-matter interaction.…”
Section: The Interplay Of Photon and Electron Dimensionalitiesmentioning
confidence: 94%
“…It is evident that the contribution is greater for the crystal for which the values of the parameters E, ET, EL, are greater while m and y are smaller. The estimates carried out for GaAs and LiH (ET = 1.515 eV, hy = 0.1 meV, EL, = 0.25 meV, E = 12.6, m = 0.298m,) [28] (ET = 4.95 eV, hy = 3 .…”
Section: *mentioning
confidence: 99%
“…Since the free-exciton recombination luminescence should be related to the radiative decay process of polaritons [4], luminescence measurement is also an appropriate means for understanding the dynamical behaviour of polaritons. Up to now, polariton luminescences have been reported on CdS [5] and GaAs [6]. But, because of various unfavourable factors, such as the anisotropy of the wurtzite crystal, the spatial dispersion induced reflection anomaly, or the overlapping bound-exciton emission lines, the analyses of the polariton luminescence spectra become considerably complicated.…”
Section: Introductionmentioning
confidence: 99%