Polarity Dependence of the Conduction Mechanism in Interlevel Low-$k$ Dielectrics

Lin, Ming Chang; Liang, James W.; Wang, C. J.; Juan, Alex; Su, K. C.

doi:10.1109/led.2012.2196967

Cited by 5 publications

(3 citation statements)

References 5 publications

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“…The tunneling mechanism, in particular, Fowler–Nordheim (F–N) tunneling, describes the conduction of silicon dioxide (SiO 2 ) film. The thermionic emission (Schottky Emission; S‐E) or Frenkel–Poole (F–P) emission was responsible for the low‐ k film and SiO 2 film possessing a higher leakage current . F–N mechanism, which was reported to occur mostly in high electrical fields (E > 4 MV/cm), is not suitable to explain the conduction mechanisms of low‐ k film.…”

Section: Resultsmentioning

confidence: 99%

“…The thermionic emission (Schottky Emission; S-E) or Frenkel-Poole (F-P) emission was responsible for the low-k film and SiO 2 film possessing a higher leakage current. 11 -14 F-N mechanism, which was reported to occur mostly in high electrical fields (E > 4 MV/cm) 13,15,16 , is not suitable to explain the conduction mechanisms of low-k film. The S-E mechanism 11 (see Eq.…”

Section: Article Hydrocarbon Incorporation Effect On the Electrical Pmentioning

confidence: 99%

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Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

Kim

Kang

Seo

et al. 2015

Bulletin Korean Chem Soc

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SiCOH films containing hydrocarbon porogens were prepared using a plasma enhanced chemical vapor deposition system. Their chemical and electrical properties were characterized with various hydrocarbon incorporations. The hydrocarbon incorporation of SiCOH films was estimated using Fourier transform infrared absorption spectra by calculating the peak ratio of hydrocarbon related peaks and Si-O peaks. Thereafter, changes seen in current-voltage (I-V) curves were explained by defect states in the interface of films related with the variation of hydrocarbon incorporation by deposition and/or by postdeposition annealing.

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Section: Resultsmentioning

confidence: 99%

Section: Article Hydrocarbon Incorporation Effect On the Electrical Pmentioning

confidence: 99%

Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

Kim

Kang

Seo

et al. 2015

Bulletin Korean Chem Soc

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“…State‐of‐the‐art elastic electronics are classified into three main groups: first, conductive interconnection lines can be realized by using intrinsically elastic conductors, air‐bridge structures, and metal lines on prestretched substrates or patterned into meander‐like geometries . Examples are carbon nanotubes embedded into a rubber matrix (stretchable up to 100%), or metal films on porous polydimethylsiloxane (PDMS) (stretchable by 80%) .…”

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confidence: 99%

Stretchable and Conformable Oxide Thin‐Film Electronics

Münzenrieder

Cantarella

Vogt

et al. 2015

Adv Elect Materials

106

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Stretchable large‐area high‐performance amorphous oxide thin‐film electronics fabricated using locally reinforced composite elastomers or wavy structures are functional while elongated by >200% and after 4000 stretching and relaxation cycles. 2D stretchable sensors, amplifiers, and circuits for wireless power transmission are conformably wrapped around arbitrary 3D structures and enable sensor systems for electronic implants and skins.

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Charge transport mechanism in periodic mesoporous organosilica low-k dielectric

Gismatulin

Gritsenko

Серегин

et al. 2019

Applied Physics Letters

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Periodic mesoporous organosilicas are promising insulating materials for multilevel interconnects of integrated circuits because of their unique structural and mechanical properties. Therefore, understanding of their electrical characteristics, particularly the charge transport mechanism, is important. It is generally accepted that the thin dielectric film charge transport is limited by the Frenkel effect. In our work, the charge transport of the periodic mesoporous organosilica structure is analyzed with four volume-limited charge transport models. It is established that the Frenkel model of Coulomb trap ionization, the Hill-Adachi model of overlapping Coulomb potentials and the Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization quantitatively, do not describe the charge transport of the periodic mesoporous organosilica low-k dielectric. The Nasyrov-Gritsenko model gives a consistent explanation of the charge transport of the periodic mesoporous organosilica low-k structure at different temperatures with the trap concentration N = 5.4 × 1020 cm−3 and effective mass m* = 0.82 me. The thermal trap energy Wt = 1.6 eV and the optical trap energy Wopt = 3.2 eV obtained from the simulation by the Nasyrov-Gritsenko model correspond to the Si-Si defect.

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Polarity Dependence of the Conduction Mechanism in Interlevel Low-$k$ Dielectrics

Cited by 5 publications

References 5 publications

Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors

Stretchable and Conformable Oxide Thin‐Film Electronics

Charge transport mechanism in periodic mesoporous organosilica low-k dielectric

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