Polarity-dependent tunneling conductance of Ta/Ta2O5/Ag junctions

Ekrut, Horst; Hahn, Artur

doi:10.1063/1.327777

Cited by 15 publications

(4 citation statements)

References 12 publications

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“…[15][16][17] The second limitation of most previous experimental investigations of MIM diodes is that they focused on the use of insulators produced by oxidation or nitridation of these underlying polycrystalline metal electrodes. 5,6,10,[18][19][20] Insulators formed in this manner are typically of low quality which can have a severe negative impact on device performance and repeatability.…”

Section: Introductionmentioning

confidence: 99%

“…[18][19][20] In addition, the practice of using native oxides and nitrides strictly limits the range of metalinsulator combinations that can be studied. To target different applications, it is desirable to pair up insulators having a range of band-gaps and electron affinities with small and large work a) Author to whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Alimardani

King

French

et al. 2014

Journal of Applied Physics

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Articles you may be interested inEnhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling Appl. Phys. Lett. 105, 082902 (2014); 10.1063/1.4893735 Conduction processes in metal-insulator-metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition J. Vac. Sci. Technol. A 32, 01A122 (2014); 10.1116/1.4843555 Impact of top electrode on electrical stress reliability of metal-insulator-metal capacitor with amorphous ZrTiO 4 film Appl. Phys. Lett. 96, 133501 (2010); 10.1063/1.3377914 Influence of the electrode material on Hf O 2 metal-insulator-metal capacitors High-temperature conduction behaviors of HfO 2 / TaN -based metal-insulator-metal capacitorsThe performance of thin film metal-insulator-metal (MIM) diodes is investigated for a variety of large and small electron affinity insulators using ultrasmooth amorphous metal as the bottom electrode. Nb 2 O 5 , Ta 2 O 5 , ZrO 2 , HfO 2 , Al 2 O 3 , and SiO 2 amorphous insulators are deposited via atomic layer deposition (ALD). Reflection electron energy loss spectroscopy (REELS) is utilized to measure the band-gap energy (E G ) and energy position of intrinsic sub-gap defect states for each insulator. E G of as-deposited ALD insulators are found to be Nb 2 O 5 ¼ 3.8 eV, Ta 2 O 5 ¼ 4.4 eV, ZrO 2 ¼ 5.4 eV, HfO 2 ¼ 5.6 eV, Al 2 O 3 ¼ 6.4 eV, and SiO 2 ¼ 8.8 eV with uncertainty of 60.2 eV. Current vs. voltage asymmetry, non-linearity, turn-on voltage, and dominant conduction mechanisms are compared. Al 2 O 3 and SiO 2 are found to operate based on Fowler-Nordheim tunneling. Al 2 O 3 shows the highest asymmetry. ZrO 2 , Nb 2 O 5 , and Ta 2 O 5 based diodes are found to be dominated by Frenkel-Poole emission at large biases and exhibit lower asymmetry. The electrically estimated trap energy levels for defects that dominate Frenkel-Poole conduction are found to be consistent with the energy levels of surface oxygen vacancy defects observed in REELS measurements. For HfO 2 , conduction is found to be a mix of trap assisted tunneling and Frenkel-Poole emission. Insulator selection criteria in regards to MIM diodes applications are discussed. V C 2014 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Alimardani

King

French

et al. 2014

Journal of Applied Physics

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“…The standard way to achieve high speed rectification in an MIM diode is through Fowler-Nordheim tunneling (FNT) dominated charge transport in conjunction with the use of asymmetric work function metal electrodes which produce asymmetric, polarity dependent electron tunneling barriers. [8][9][10] Based on this principle of operation, insulators with a large electron affinity (v) appear to be desirable so as to produce small energy barriers at the metal electrodes and allow FNT to occur at small applied bias (low V ON ). Following this line of reasoning, it has been suggested that Nb 2 O 5 and Ta 2 O 5 , insulators with large v, should be promising candidate insulators for rectenna applications.…”

Section: Introductionmentioning

confidence: 99%

Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition

Alimardani

McGlone

Wager

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Metal-insulator-metal diodes with Nb 2 O 5 and Ta 2 O 5 insulators deposited via atomic layer deposition are investigated. For both Nb 2 O 5 and Ta 2 O 5 , the dominant conduction process is established as Schottky emission at small biases and Frenkel-Poole emission at large biases. Fowler-Nordheim tunneling is not found to play a role in determining current versus voltage asymmetry. The dynamic dielectric constants are extracted from conduction plots and found to be in agreement with measured optical dielectric constants. Trap energy levels at / T % 0.62 and 0.53 eV below the conduction band minimum are estimated for Nb 2 O 5 and Ta 2 O 5 , respectively. V

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“…On the other hand, a device with dissimilar work-function electrodes ( M1 = M2 ) produces a built-in voltage (V bi = ( M1 -M2 )/e, where e is the electronic charge) across the tunnel barrier and obvious asymmetry (see Figure 18) leading to different probabilities for electrons tunneling in opposite directions. 555,556 Operation of these diodes is based on Fowler-Nordheim tunneling (FNT), described in Eq. 9:…”

Section: Mim Tunnel Diodesmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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Polarity-dependent tunneling conductance of Ta/Ta2O5/Ag junctions

Cited by 15 publications

References 12 publications

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

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