Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy

Iller, A.; Marks, J.; Grzegory, I.; Litwin‐Staszewska, E.; Boćkowski, Michał

doi:10.1002/crat.2170320204

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…28 -36,40,46 In contrast, air-loaded samples must be cleaned first. 63,64 Ion scattering for MOCVD-grown GaN shows that N-polar faces are stabilized by hydrogen, 53,54 whereas Ga-polar surfaces are apparently stabilized by contaminants. 47 Bermudez et al 21 compared several surface preparation methods.…”

Section: Introductionmentioning

confidence: 99%

Morphology of GaN(0001) and GaN(0001̄) surfaces: Persistence of surface clusters

Manske

Ratkovich

Lemke

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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We report a scanning tunneling microscopy and low energy electron diffraction study of GaN͑0001͒ and GaN͑0001͒ surfaces. Surface preparation methods included anneal, N 2 ϩ sputter/anneal, and chemical etching with Br 2 . The onset of surface facet formation by thermal anneal is 1050 K, determined by electron diffraction, whereas the onset of facet formation by Br 2 etching at elevated sample temperatures is 765 K. For all surfaces studied, facetted and unfacetted, nanosize clusters are observed in scanning tunneling microscopy images regardless of treatment. The presence and persistence of these clusters is discussed, as well as their potential impact on studies of GaN surface chemistry and surface electronic structure.

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Section: Introductionmentioning

confidence: 99%

Morphology of GaN(0001) and GaN(0001̄) surfaces: Persistence of surface clusters

Manske

Ratkovich

Lemke

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…[1][2][3] The polarity determination of GaN has been carried out mainly on thin film samples by convergent beam electron diffraction (CBED), [4][5][6] coaxial impact collision ion scattering spectroscopy (CAICISS), 7,8 and Auger electron spectroscopy (AES). 9,10 However, few investigations on the polarity of GaN bulk single crystals using X-ray anomalous dispersion have been performed.…”

Section: Introductionmentioning

confidence: 99%

“…Since the polar axis of GaN is the c -axis, GaN single crystals have the {0001} basal planes formed by either Ga atoms or N atoms. It is known that the surface morphology of GaN single crystals is different for the two basal plane faces, and one face is flat but the other one is rough. − The polarity determination of GaN has been carried out mainly on thin film samples by convergent beam electron diffraction (CBED), − coaxial impact collision ion scattering spectroscopy (CAICISS), , and Auger electron spectroscopy (AES). , However, few investigations on the polarity of GaN bulk single crystals using X-ray anomalous dispersion have been performed.…”

Section: Introductionmentioning

confidence: 99%

Morphology and Polarity of GaN Single Crystals Synthesized by the Na Flux Method

Aoki

Yamane

Shimada

et al. 2001

Crystal Growth & Design

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The correlation between morphology and polarity was investigated for GaN single crystals synthesized by the Na flux method. The polarity was identified by using anomalous X-ray dispersion. Colorless transparent prismatic single crystals were classified into three types. The first had a smooth basal plane face and no hexagonal pyramidal faces, the second had smooth pyramidal faces, and the third had a rough basal plane face and rough pyramidal faces. The prismatic crystals with smooth surfaces had N-polarity and grew in the −c direction, whereas the crystals having rough surfaces had Ga-polarity and grew in the +c direction. In colorless transparent platelet single crystals, one side of the basal planes had a mirror smooth surface, while the other side had many step edges and hexagonal pits. The smooth basal plane and the rough basal plane were the (0001̄) N-face and (0001) Ga-face, respectively. Black pyramidal crystals had a smooth (0001) basal plane face corresponding to the Ga-face.

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“…The lattice parameters were measured using the triple-crystal set-up of the high-resolution X-ray diffractometers (the position of the analyzer gives a direct measure of the Bragg-peak position [17]. Most probably, the rough side is nitrogen-terminated and the smooth one is gallium-terminated [18]. It can be seen that the smooth side possesses a bigger lattice parameter c with respect to the rough side.…”

Section: -Experimental Results For Ganmentioning

confidence: 99%

Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride

et al. 1997

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The paper reports on the changes of lattice parameters by free electrons (via deformation potential of the conduction band mŸ and by point defects (vŸ size effect) for gallium nitride. The measurements were performed on single crystals grown at about 15 kbar and 1800 K and on homoepitaxial layers using high-resolution X-ray diffraction methods at temperatures 40-770 K. It was found that a high free-electron concentration increase both, the lattice parameters and thermal expansion. Ir was observed that most of the single crystals of gallium nitride possess different lattice parameters on their two sides and this difference increases at high temperature. The experimental results of X-ray diffraction, electron microscopy and Hall measurements served for creating a model of generation of low-angle boundaries in the pressure-grown single crystals.PACS. 61.72.Ji -Point defects (vacancies, interstitials, color centers, etc.) and defect clusters. PACS 61.72.Vv -Doping and impurity implantation in III-V and II-VI semiconductors. PACS 01.30.Cc -Conference proceedings.

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Polarity identification of GaN bulk single crystals (0001) surface by Auger electron spectroscopy

Cited by 6 publications

References 7 publications

Morphology of GaN(0001) and GaN(0001̄) surfaces: Persistence of surface clusters

Morphology of GaN(0001) and GaN(0001̄) surfaces: Persistence of surface clusters

Morphology and Polarity of GaN Single Crystals Synthesized by the Na Flux Method

Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride

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