Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Chokamnuai, Thitipong; Rattanadon, P.; Thainoi, Supachok; Panyakeow, Somsak; Kanjanachuchai, Songphol

doi:10.1016/j.jcrysgro.2012.12.092

Cited by 4 publications

(10 citation statements)

References 31 publications

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“…In Fig.5 the first peak is located at 1.05eV, the second at 1.10eV, the third at 1.24eV and the fourth at 1.29eV. They correspond to emission of [1][2][3][4][5][6][7][8][9][10], [110] free-standing QDs and In x Ga 1-x As CHP layer respectively 7 . Moreover, compared to 3 stacks, 1 stack has smaller QDs size but lower ground state energy in Fig4.(a)-(b).…”

Section: Discussionmentioning

confidence: 99%

“…The deposition of 10nm GaAs spacing layer and QDs is repeated to obtain 3 stacks and 5 stacks. Further details on the growth are reported in 5 . Another set of sample have been fabricated without capping to carry out AFM measurements.…”

Section: Quantum Dots Growthmentioning

confidence: 99%

“…As is shown in Fig.1 (b), the QDs are aligned along [1][2][3][4][5][6][7][8][9][10] , whereas the size on both directions are similar on multiple stack samples. The distance between QDs also varies with stack number.…”

Section: Morphologymentioning

confidence: 99%

“…The distance between QDs also varies with stack number. This inter-dot distance is a key parameter to favor coupling between QDs ensembles 5 . The lateral coupling rapidly decreases as the distance increases.…”

Section: Morphologymentioning

confidence: 99%

“…In this study, we employed temperature dependent macro PL characterization to investigate InAs QDs on InGaAs cross hatched patterns (CHPs) grown by MBE on (001)-GaAs substrates 5 . The structure investigated is composed of multi stack QD of 1, 3 or 5 stacks of InAs QDs and 10-nm GaAs spacer.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Xu¹,

Jaffré²,

Alvarez³

et al. 2015

AIP Conference Proceedings

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Section: Discussionmentioning

confidence: 99%

Section: Quantum Dots Growthmentioning

confidence: 99%

Section: Morphologymentioning

confidence: 99%

Section: Morphologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Xu¹,

Jaffré²,

Alvarez³

et al. 2015

AIP Conference Proceedings

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Tuning the Emission Directionality of Stacked Quantum Dots

et al. 2018

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The emission directionality of stacks of coupled quantum dots (QDs) is investigated within the framework of 8-band k•p-theory including strain and strain-induced piezoelectricity up to second order. Using an artificial cuboidal QD we show that the degree of radiation anisotropy can be tuned from −33 % to nearly +60 % via the structure's vertical aspect ratio. We then demonstrate that these findings can be transferred to stacked InGaAs quantum dots whose emission directionality is tailored (i) via the interdot coupling strength given by the separating barrier width, as well as (ii) the number of stacked QDs. Our results enable the design and optimization of top and edge emitters based on stacked QDs.

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Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields

et al. 2016

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Thin, highly-strained InAs layers epitaxially grown on GaAs/InGaAs cross-hatch surfaces undergo postgrowth transformations that yield several morphologies ranging from aligned quantum wires to quantum dots and micron-scale pyramids. The shape varieties result from the multiple pathways created from the combined/competitive effects of asymmetric adatom diffusions, subsurface stress fields and misfit energy minimization. These morphologies reveal the multiple outcomes of metastable states between the two-and the three-dimensional transition that if properly captured and engineered may open up new windows of opportunities both in devices such as sensors and in fundamental quantum studies.

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Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Cited by 4 publications

References 31 publications

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

Tuning the Emission Directionality of Stacked Quantum Dots

Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields

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