Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Guo, Jiarui; Gu, Yan; Liu, Yu‐Shen; Liang, Fangzhou; Chen, Wei; Xie, Feng; Yang, Xifeng; Qian, Weiying; Zhang, Xiangyang; Yang, Guofeng

doi:10.1109/ted.2023.3258920

Cited by 12 publications

(4 citation statements)

References 38 publications

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“…It can be calculated by the noise equivalent power (NEP): , D * = A × B NEP , where A is the active area, B is the electrical bandwidth. Generally, the NEP of the device can be estimated according to the equation: ,,, NEP = 2 q I D R , where q is the electronic charge constant and I D is the dark current density, and then the specific detectivity D * was calculated to be 4.36 × 10 16 Jones at 2 V. However, this specific detectivity value was overestimated because it only considered the short noise, but the noise of PDs commonly includes shot noise, thermal noise, and flicker (1/ f ) noise. , In order to more precisely measure specific detectivity, it is crucial to take into account the contribution of flicker noise at low frequency. Figure a shows the noise power spectra of PD measured in the frequency range of 1 to 100 kHz at various drain voltages.…”

Section: Resultsmentioning

confidence: 99%

“…Due to the strong polarization effects, high-concentration and high-mobility two-dimensional electron gases (2DEGs) often exist at the AlGaN/GaN heterojunction interface, which is quite beneficial to collect the photocurrent for high responsivity. − Recently, several studies of PDs based on AlGaN/GaN 2DEGs have been reported. − However, the 2DEG channel is naturally normally on even in the dark condition, which leads to high power consumption, low phototo-dark current ratio (PDCR) and poor detectivity. Several methods have been proposed to suppress the dark current for PDs, such as p-GaN gate, , semitransparent gate contact, p-oxide transparent gate, gate recessed .…”

Section: Introductionmentioning

confidence: 99%

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Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a twoterminal normally off device. The device exhibited a high responsivity of 2.1 × 10 7 A/W and a high specific detectivity of 1.7 × 10 15 Jones under the illumination of 9.7 μW/cm 2 , indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Wang,

Feng,

Zhong

et al. 2023

ACS Photonics

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“…The N-type ohmic contact layer consists of an N-type Al 0.1 Ga 0.9 N material with a high electron concentration. The layer is doped with a concentration of 1.0×10 18 cm -3 and has a thickness of 500 nm [10]. It is positioned on top of the buffer layer.…”

Section: Detector Structurementioning

confidence: 99%

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

Xu,

Liu,

et al. 2024

International Academic Conference on Optics and Photonics (IACOP 2023)

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In this paper, we present the design and simulation of a GaN-based back-illuminated ultraviolet (UV) photodetector with an absorption layer compensation doping. In the conventional UV detector, the absorption layer typically exhibits a high background doping concentration (ranging from 1.0×10 15 to 1.0×10 17 cm -3 ), which unintentionally introduces carriers that impact the electric field distribution within the absorption layer. Consequently, the electric field near the N electrode is diminished. In the back-illumination operating mode, a substantial amount of the incident light is absorbed by the absorption layer positioned near the N electrode. This is primarily attributed to the high absorption coefficient of the AlGaN material. Consequently, the lower electric field in this region hinders the prompt conversion of the photogenerated carriers into signals. This design improves the performance of the UV photodetector by simulating the implementation of compensatory doping in the absorber layer. This helps to reduce the impact of background doping concentration. After optimization, at the peak detection wavelength of 360 nm, the compensated doped PD exhibited an unbiased peak responsivity of 0.15 A/W, as determined by spectral response simulation work.

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“…8) The electric field profile can be homogenized by using such as the gated-edge termination, [9][10][11] tri-anode configuration, 12) field plates (FPs), [13][14][15][16][17][18] floating metal rings, 19,20) p-GaN termination [21][22][23][24] and polarization-induced electric field effect. 25) Among these candidates, FP structures have been widely used because of the easier technical process and the effective charge-coupling effect. The charge-coupling effect enables less Schottky barrier lowering effect, and then the leakage current can be decreased.…”

Section: Introductionmentioning

confidence: 99%

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Wang,

Huang,

Chu

et al. 2023

Jpn. J. Appl. Phys.

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In this work, by using numerical TCAD simulations, we have systematically studied the impact of different field plates on the electrical characteristics for lateral AlGaN/GaN-based Schottky barrier diodes (SBDs) with recessed anode. The field plate enables the formation of a super-junction. When compared with the reference device without a field plate, the proposed SBDs can generate charge-coupling effect between the field plate and the recessed anode region, which can effectively reduce the electric field magnitude at the metal/sidewall interface. We also find that the electric field profiles can be affected by the field plate length, insulation layer thickness and different insulation materials with various dielectric constants. By doing so, we can enhance the breakdown voltage by homogenizing the electric field distribution in the GaN drift layer. Then, the electric field at the recessed anode region can be decreased and the GaN drift layer can be extensively depleted

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Polarization Assisted Interdigital AlGaN/GaN Heterostructure Ultraviolet Photodetectors

Cited by 12 publications

References 38 publications

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

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