Polarization control at spin-driven ferroelectric domain walls

Leo, Naëmi; Bergman, Anders; Cano, A.; Poudel, Narayan; Lorenz, B.; Fiebig, Manfred; Meier, Dennis

doi:10.1038/ncomms7661

Cited by 32 publications

(36 citation statements)

References 44 publications

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“…A specific type of oxide interface -that is naturally occurring -are domain walls (DWs) [5]. DWs show diverse confinement enabled functional properties, which are distinct from the bulk matrix: it has already been established that DWs can be magnetic [6], multiferroic [7], (super-) [8] conductive [9][10][11][12][13][14][15][16][17][18], and have local strain gradients (for twin walls) [19]. These functional properties are readily influenced by electrostatics, strain, and chemical doping [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Electronic bulk and domain wall properties in B -site doped hexagonal ErMnO3

et al. 2018

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Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO3 is donor doped with Ti 4+ . Density functional theory calculations show that Ti 4+ goes to the B-site, replacing Mn 3+ . Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro-and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality. arXiv:1710.05557v1 [cond-mat.mtrl-sci]

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Section: Introductionmentioning

confidence: 99%

Electronic bulk and domain wall properties in B -site doped hexagonal ErMnO3

et al. 2018

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“…The findings highlight that in the low-symmetry ferroelectric phases, which widely exist in solid solutions2733 and thin films2650, new types of domain walls are yet to be explored both theoretically and experimentally. Extrapolating from the potential utilization of controlled chirality at magnetic Néel walls1451 and the control of the polarization configuration by magnetic field52, we hope that our findings will stimulate explorations of ferroelectric chiral domain walls and their possible application in future electronic devices.…”

Section: Discussionmentioning

confidence: 83%

Néel-like domain walls in ferroelectric Pb(Zr,Ti)O3 single crystals

et al. 2016

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In contrast to the flexible rotation of magnetization direction in ferromagnets, the spontaneous polarization in ferroelectric materials is highly confined along the symmetry-allowed directions. Accordingly, chirality at ferroelectric domain walls was treated only at the theoretical level and its real appearance is still a mystery. Here we report a Néel-like domain wall imaged by atom-resolved transmission electron microscopy in Ti-rich ferroelectric Pb(Zr1−xTix)O3 crystals, where nanometre-scale monoclinic order coexists with the tetragonal order. The formation of such domain walls is interpreted in the light of polarization discontinuity and clamping effects at phase boundaries between the nesting domains. Phase-field simulation confirms that the coexistence of both phases as encountered near the morphotropic phase boundary promotes the polarization to rotate in a continuous manner. Our results provide a further insight into the complex domain configuration in ferroelectrics, and establish a foundation towards exploring chiral domain walls in ferroelectrics.

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“…Across the domain wall, we expect that the spin-spiral plane continuously changes from +ab (clockwise) to −ab (anticlockwise) via bc [46,47]. Namely the bc-plane spin cycloid appears between the two different ab-plane cycloids.…”

Section: Resultsmentioning

confidence: 99%

Theory of magnetic-field-induced polarization flop in spin-spiral multiferroics

Mochizuki

2015

Phys. Rev. B

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The magnetic-field-induced 90• flop of ferroelectric polarization P in a spin-spiral multiferroic material TbMnO3 is theoretically studied based on a microscopic spin model. We find that the direction of the P -flop or the choice of +Pa or −Pa after the flop is governed by magnetic torques produced by the applied magnetic field H acting on the Mn spins and thus is selected in a deterministic way, in contradistinction to the naively anticipated probabilistic flop. This mechanism resolves a puzzle of the previously reported memory effect in the P direction depending on the history of the magnetic-field sweep, and enables controlled switching of multiferroic domains by externally applied magnetic fields. Our Monte-Carlo analysis also uncovers that the magnetic structure in the P a phase under H b is not a so-far anticipated simple ab-plane spin cycloid but a conical spin structure.

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Polarization control at spin-driven ferroelectric domain walls

Cited by 32 publications

References 44 publications

Electronic bulk and domain wall properties in B -site doped hexagonal ErMnO3

Electronic bulk and domain wall properties in B -site doped hexagonal ErMnO3

Néel-like domain walls in ferroelectric Pb(Zr,Ti)O3 single crystals

Theory of magnetic-field-induced polarization flop in spin-spiral multiferroics

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