“…5 -Ch. 7 is to use thin layers of rare-earth ions (Greiner, Boggs, Loftus, Wang and Mossberg [1999]) embedded in a spatiallyperiodic semiconductor structure (Khitrova, Gibbs, Jahnke, Kira and Koch [1999]). The two-level atoms in the layers should be rare-earth-ions with the density of 10 15 − 10 16 cm −3 , and large transition dipole moments.…”