Polarization-dominated thermal-electric-mechanical behaviours in GaN ceramics

Qin, GuoShuai; Zhou, XinPeng; Wang, Yao; Lu, Chunsheng; Zhao, Minghao

doi:10.1016/j.ceramint.2022.06.243

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…For an n -type GaN nanowire, the concentrations of acceptor and donor impurities are N + D = 1 × 10 23 m −3 and

/ N + D , where N i is the concentration of intrinsic carriers. Other relevant material constants are listed in Table 1 [ 36 , 37 , 38 , 39 , 40 ]. Generally speaking, an analytic solution for such a nonlinear model is difficult to be obtained.…”

Section: Basic Equations For a Gan Nanowire Under Light Irradiationmentioning

confidence: 99%

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties

et al. 2023

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In this paper, we propose a one-dimensional model that combines photoelectricity, piezoelectricity, and photothermal effects. The influence of ultraviolet light on the electromechanical coupling properties of GaN nanowires is investigated. It is shown that, since the ultraviolet photon energy is larger than the forbidden gap of GaN, the physical fields in a GaN nanowire are sensitive to ultraviolet. The light-induced polarization can change the magnitude and direction of a piezoelectric polarization field caused by a mechanical load. Moreover, a large number of photogenerated carriers under photoexcitation enhance the current density, whilst they shield the Schottky barrier and reduce rectifying characteristics. This provides a new theoretical nanoarchitectonics approach for the contactless performance regulation of nano-GaN devices such as photoelectric sensors and ultraviolet detectors, which can further release their great application potential.

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“…For an n -type GaN nanowire, the concentrations of acceptor and donor impurities are N + D = 1 × 10 23 m −3 and

Section: Basic Equations For a Gan Nanowire Under Light Irradiationmentioning

confidence: 99%