Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity
Zhengji Zhu,
Chunshuang Chu,
Kangkai Tian
et al.
Abstract:In this report, we propose a polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer. We employ an Al-composition-graded AlxGa1-xN layer for achieving p-type doping feature. We have studied the light propagation in the unintentionally doped GaN (i-GaN) absorption layer with different thicknesses, and the optimized thickness is 2 μm. As a result, the photo current of 10-2 A/cm2 and the responsivity of 2.12 A/W can be obtained at the applied bias of 5 V. In our fabricated … Show more
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