2023
DOI: 10.3390/ma16031227
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Polarization Doping in a GaN-InN System—Ab Initio Simulation

Abstract: Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement wi… Show more

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References 57 publications
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