In this study, the effects of quantum dot size on the binding energy, radiative lifetime, and optical absorption coefficient of exciton state in both GaN/Al
x
Ga1−x
N core/shell and Al
x
Ga1−x
N/GaN inverted core/shell quantum dot structures are studied. For the GaN/Al
x
Ga1−x
N core/shell structure, the variation trend of binding energy is the same as that of radiation lifetime, both of which increase first and then decrease with the increase of core size. For Al
x
Ga1−x
N/GaN inverted core/shell structure, the binding energy decreases first and then increases with core size increasing, and the trends of radiation lifetime varying with core size under different shell sizes are different. For both structures, when the photon energy is approximately equal to the binding energy, the peak value of the absorption coefficient appears, and there will be different peak shifts under different conditions.