2022
DOI: 10.1109/jstqe.2022.3187083
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Polarization Engineered Second Harmonic Generation Enhancement from Amorphous Silicon - Gallium Nitride Heterogeneous Resonant Metasurface

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Cited by 2 publications
(2 citation statements)
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“…III-V materials have strong nonlinear coefficients, but signals can be screened by the substrate required for epitaxial growth or the second-order nonlinear optical susceptibility tensor is oriented unfavorably for out-of-plane excitation. [5,6] Poled polymers show an impressive modulation efficiency with an order of magnitude larger electro-optic coefficient compared to lithium niobate, but the material stability is hindering its use in long-term applications. [7,8] Plasmonic structures permit the highest electric field confinement but they are subject to high optical losses and low damage threshold.…”
Section: Introductionmentioning
confidence: 99%
“…III-V materials have strong nonlinear coefficients, but signals can be screened by the substrate required for epitaxial growth or the second-order nonlinear optical susceptibility tensor is oriented unfavorably for out-of-plane excitation. [5,6] Poled polymers show an impressive modulation efficiency with an order of magnitude larger electro-optic coefficient compared to lithium niobate, but the material stability is hindering its use in long-term applications. [7,8] Plasmonic structures permit the highest electric field confinement but they are subject to high optical losses and low damage threshold.…”
Section: Introductionmentioning
confidence: 99%
“…In general, the scatterers are designed as high contrast pillars made of meta-atoms with a large refractive index and low extinction coefficient depending on the specific spectral range. Titanium oxide (TiO 2 ) [ 21 ], gallium nitride (GaN) [ 22 ], silicon nitride (SiN) [ 23 ], hydrogenated amorphous silicon (a-Si:H) [ 24 ], and SiO 2 [ 25 ], among others, are widely used material candidates for the visible spectral range, while a-Si, gallium arsenide (GaAs) [ 26 ], gallium nitride (GaN) [ 27 ] aluminium nitride (AlN) [ 5 ], and litium niobate (LiNbO 3 ) [ 28 ] are the most commonly used for near-infrared applications.…”
Section: Introductionmentioning
confidence: 99%