Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Zeng, Binjian; Xie, Shichang; Zhang, Sirui; Huang, Haoliang; Ju, Changfan; Zheng, Shuaizhi; Peng, Qiangxiang; Yang, Qiong; Zhou, Yichun; Liao, Min

doi:10.1016/j.actamat.2024.119920

Acta Materialia

2024

DOI: 10.1016/j.actamat.2024.119920

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Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Binjian Zeng,

Shichang Xie,

Sirui Zhang

et al.

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Cited by 8 publications

References 39 publications

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Multiple Polarization States in Hf₁₋_xZr_xO₂ Thin Films by Ferroelectric and Antiferroelectric Coupling

Zeng,

Yin,

Liu

et al. 2024

Advanced Materials

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HfO2‐based multi‐bit ferroelectric memory combines non‐volatility, speed, and energy efficiency, rendering it a promising technology for massive data storage and processing. However, some challenges remain, notably polarization variation, high operation voltage, and poor endurance performance. Here we show Hf1−xZrxO2 (x = 0.65 to 0.75) thin films grown through sequential atomic layer deposition (ALD) of HfO2 and ZrO2 exhibiting three‐step domain switching characteristic in the form of triple‐peak coercive electric field (EC) distribution. This long‐sought behavior shows nearly no changes even at up to 125 °C and after 1 × 108 electric field cycling. By combining the electrical characterizations and integrated differential phase‐contrast scanning transmission electron microscopy (iDPC‐STEM), we reveal that the triple‐peak EC distribution is driven by the coupling of ferroelectric switching and reversible antiferroelectric–ferroelectric transition. We further demonstrate the 3‐bit per cell operation of the Hf1−xZrxO2 capacitors with excellent device‐to‐device variation and long data retention, by the full switching of individual peaks in the triple‐peak EC. The work represents a significant step in implementing reliable non‐volatile multi‐state ferroelectric devices.

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Multiple Polarization States in Hf₁₋_xZr_xO₂ Thin Films by Ferroelectric and Antiferroelectric Coupling

Zeng,

Yin,

Liu

et al. 2024

Advanced Materials

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High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

Roy,

Islam,

Ali

et al. 2024

Physica Status Solidi (a)

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Ferroelectric (FE) hafnium zirconium oxide (HZO) thin‐film transistors (TFTs) are of increasing interest for next‐generation memory and computing applications. However, these devices face challenges in achieving a substantial memory window (MW). This report presents amorphous InGaZnO (a‐IGZO) ferroelectric–dielectric (FD), dual‐gate thin‐film transistors (DG‐TFTs) with FE‐HZO as a bottom gate insulator (GI) and SiO2 as a top GI. The ferroelectricity in HZO is confirmed through the grazing incidence X‐ray diffraction (GI‐XRD), capacitance, and polarization measurements. The FD‐DG TFT can increase the MW by tuning the threshold voltage (VTH) due to electrostatic coupling between the top gate (TG) and bottom gate (BG). The increase of MW at the TG driving is related to the coupling factor which is equal to the ratio of the equivalent capacitance of top to bottom gated transistors. During the bottom sweep, the FD‐DG‐TFT demonstrates an anticlockwise hysteresis with a MW of 4.98 V, a high ION/IOFF ratio of ≈106, and a steep subthreshold swing (SS) of 90 mV dec−1. On the contrary, MW of 12 V and SS of 140 mV dec−1 are observed for the top sweep operation. A thinner ferroelectric GI at BG TFT induces sufficient electrostatic coupling to cause a large VTH shift at TG driving, resulting in a boosted MW.

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Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

Jiang,

Lin,

Shiojiri

et al. 2024

Small

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Ferroelectric properties of Hf0.5Zr0.5O2 are strongly correlated with its crystallographic orientation, with the [001] direction serving as the polar axis. However, the epitaxial growth of highly polar‐axis‐oriented Hf0.5Zr0.5O2 layers with pronounced ferroelectricity is rarely reported. Here epitaxial (001)‐oriented Hf0.5Zr0.5O2 thin films grown by atomic layer epitaxy (ALE) is demonstrated, which achieve a state‐of‐the‐art ferroelectric polarization up to 78.9 µC cm−2. The epitaxial Hf0.5Zr0.5O2 layer experiences a lattice reorientation from (010) to (001) during the wake‐up process, as evidenced by plane‐view precession electron diffraction. Accordingly, a two‐step, 90° ferroelastic domain switching model is proposed to elucidate multiple polarization switching. Furthermore, the observed polarization switching dynamics closely match with the time‐resolved negative capacitance, which is quantified as an equivalent high dielectric constant of −170. This study highlights the capability of ALE to precisely control the crystallographic orientation of Hf0.5Zr0.5O2 thin films, providing deep insights into fundamental ferroelectric mechanisms.

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Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Cited by 8 publications

References 39 publications

Multiple Polarization States in Hf₁₋_xZr_xO₂ Thin Films by Ferroelectric and Antiferroelectric Coupling

Multiple Polarization States in Hf₁₋_xZr_xO₂ Thin Films by Ferroelectric and Antiferroelectric Coupling

High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy

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Polarization fatigue mechanism of laminated hafnium zirconium oxide ferroelectric thin films

Cited by 8 publications

References 39 publications

Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling

Multiple Polarization States in Hf1−xZrxO2 Thin Films by Ferroelectric and Antiferroelectric Coupling

High Memory Window, Dual‐Gate Amorphous InGaZnO Thin‐Film Transistor with Ferroelectric Gate Insulator

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf0.5Zr0.5O2 Grown by Atomic Layer Epitaxy

Contact Info

Product

Resources

About

Multiple Polarization States in Hf₁₋_xZr_xO₂ Thin Films by Ferroelectric and Antiferroelectric Coupling

Multiple Polarization States in Hf₁₋_xZr_xO₂ Thin Films by Ferroelectric and Antiferroelectric Coupling

Ferroelastic Domain Switching and Time‐Resolved Negative Capacitance in Polar‐Axis‐Oriented Hf_0.5Zr_0.5O₂ Grown by Atomic Layer Epitaxy