Polarization of an exciton in a ZnO layer using a split gate potential

Sundqvist, P. A.; Zhao, Qinglong; Willander, Magnus

doi:10.1103/physrevb.68.155334

Cited by 10 publications

(3 citation statements)

References 15 publications

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“…The combination of a large direct band gap of 3.37 eV and 60 meV exciton binding energy at room temperature makes ZnO an important application to the ultraviolet light emission source. [1,2] In addition, as compared to the situation in Si and GaAs, ZnO is quite resistant to displacement damage. This fact suggests that it could be used in the space environment where particle irradiation is strong.…”

Section: Introductionmentioning

confidence: 99%

Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

Peng¹,

Wang²,

Zhi‐Jian³

et al. 2009

Chinese Phys. B

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Section: Introductionmentioning

confidence: 99%

Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

Peng¹,

Wang²,

Zhi‐Jian³

et al. 2009

Chinese Phys. B

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“…As one of third generation semiconductors, zinc oxide (ZnO) has been the research focus due to its excellent properties, such as large direct band gap 3.37 eV at room temperature, and 60 meV exciton binding energy. So it could be applied to optoelectronics devices and ultraviolet light emission source [1]. A lot of experiments indicate that point defects in ZnO play a significant role in its electrical and optical performances.…”

Section: Introductionmentioning

confidence: 99%

Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy

Peng

Weng

Wang

et al. 2008

MSF

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Positron annihilation spectroscopy was employed to study the native point defects in ZnO single crystal, in combination with calculated results of positron lifetime and electron momentum distribution. The theoretical and experimental results of the positron lifetime in ZnO bulk ensure the presence of zinc monovacancy, and zinc monovacancy concentration begins to decrease above 600oC annealing treatment. Oxygen vacancies have been characterized by coincidence Doppler broadening (CDB) spectroscopy, combined with calculated electron momentum distribution. CDB spectroscopies show that oxygen vacancies don't appear until 600oC annealing treatment, and increase due to ZnO decomposition with annealing temperature rising.

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“…The direction of the exciton spin current is along the tangential direction of the isodense of the exciton. Taking ZnO as an example, it is known that excitons of ZnO are thermally stable at room temperature, and the lifetime could increase from nanoseconds to beyond milliseconds [17]. Therefore, a pure spin current of triplet excitons in ZnO may exist at room temperature.…”

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confidence: 99%

The influence of external electromagnetic field on an exciton spin current

Zhang¹,

Liu²,

Liu³

2007

J. Phys.: Condens. Matter

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A pure spin current of a triplet exciton has been proposed for a threedimensional system based on Dirac relativistic quantum mechanics, considering spin to be an intrinsic relativistic quantum variable. The transport dissipations of the triplet exciton caused by the magnetic excitation and the Coulomb interaction (such as the bremsstrahlung effect) can be minimized, making it possible to produce a pure exciton spin current with minimized charge-induced dissipation for the transport of information in spin-based devices. The exciton spin current can be expressed as a sum of an electron spin current and a hole spin current, modulated by an envelope function. It flows along the tangential direction of the isodense of the exciton. Both external electric and magnetic fields influence the exciton spin current and can be used to separate the triplet exciton and the singlet exciton. A simplification of our model, i.e., considering only an external electric field, yields the same result reported by Shen (2005 Phys. Rev. Lett. 95 187203), in which the spin current was phenomenologically derived by the expectation value of the product of spin and velocity observables. Incorporation and possible application of the exciton spin current in several systems are discussed.Spintronics is a subdiscipline of condensed matter physics whose main aim is to control and manipulate the electronic spin degree of freedom. The primary attention focuses on the basic physical principles underlying the spin injection, spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals [1][2][3]. Many proposed spintronic device schemes turn out to be practical eventually. At present, spin injection has been successfully realized in diluted magnetic semiconductors (DMSs) [4,5]. Nevertheless, the Curie temperature of the DMSs is still low and unstable for practical use at room temperature. Apart from the DMSs that make use of both the charge and spin of electrons to process and

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Polarization of an exciton in a ZnO layer using a split gate potential

Cited by 10 publications

References 15 publications

Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

Characterizing Native Point Defects in ZnO Bulk by Positron Annihilation Spectroscopy

The influence of external electromagnetic field on an exciton spin current

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