Polarization Properties of InGaN Vertical-Cavity Surface-Emitting Laser With Pipe Distributed Bragg Reflector

Ke, Ying; Wang, Chengjie; Shiu, Guo-Yi; Chen, Yiyun; Lin, Yung‐Sen; Chen, Hsiang; Han, Jung; Lin, Chia−Feng

doi:10.1109/ted.2021.3129441

Cited by 5 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Prior NP-DBR VCSEL demonstrations with cavity lengths of 8.9λ [28], 6λ [6], 6λ [7], and 1.5λ [29] exhibited threshold currents of 20 kA/cm 2 (pulsed), 42 kA/cm 2 (pulsed), 59 kA/cm 2 (pulsed), and 0.7 kA/cm 2 (CW), respectively. Previous curved mirror VCSEL demonstrations exhibited threshold current densities that ranged from 3.5 to 141 kA/cm 2 [10,11,14,30,31].…”

Section: Resultsmentioning

confidence: 99%

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

et al. 2023

View full text Add to dashboard Cite

We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold current density of 6.6 kA/cm2, a differential efficiency of 0.7%, and a maximum output power of 290 µW for a lasing mode at 411 nm and a divergence angle of 8.4°. Under CW operation, the threshold current density increased to 7.3 kA/cm2, the differential efficiency decreased to 0.4%, and a peak output power of 130 µW was reached at a current density of 23 kA/cm2.

show abstract

Section: Resultsmentioning

confidence: 99%

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

et al. 2023

View full text Add to dashboard Cite

show abstract

“…Prior NP DBR VCSEL demonstrations with cavity lengths of 9λ 17 , 6λ 23 , 6λ 24 , and 1.5λ 25 exhibited threshold currents of 20kA/cm 2 (pulsed), 42kA/cm 2 (pulsed), 59kA/cm 2 (pulsed), and 0.7kA/cm 2 (CW), respectively. Our pulsed threshold current density of 6.6kA/cm 2 compares favorably with these previous demonstrations.…”

Section: Vcsel Characterizationmentioning

confidence: 99%

Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR

Palmquist

Anderson

Kearns

et al. 2023

Gallium Nitride Materials and Devices XVIII

View full text Add to dashboard Cite

We demonstrate long cavity (60.5 ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside curved monolithic GaN lens, a buried tunnel junction (BTJ) current aperture, and a bottomside nanoporous GaN distributed Bragg reflector (DBR). Under pulsed operation (1% duty cycle, 1μs pulse), a VCSEL with a 9μm diameter aperture had a threshold current density of 6.6kA/cm2, a maximum output power of 3mW, and a differential efficiency of 5.6% for a lasing mode at 411nm. Under CW operation, the threshold current density was 7.3kA/ cm2, the differential efficiency was 2.8%, and a peak output power of 1.1mW at rollover was reached. Preliminary farfield patterns are presented and discussed.

show abstract

“…In this process, the etching direction essentially follows the flow of electric current for forming subsurface lateral pores in GaN. Many applications based on GaN or AlGaN PSs have been explored, including the improvements of LED crystal quality and light extraction [ 9 , 10 , 11 , 12 , 13 ], the liftoff of a GaN layer or an LED structure from its substrate [ 14 , 15 , 16 ], the enhancement of water-splitting efficiency [ 17 , 18 ], the formation of a distributed Bragg reflector [ 19 , 20 ], the increase in sensor sensitivity [ 21 ], the relaxation of strain [ 22 ], and the fabrications of lateral and vertical laser diodes [ 23 , 24 , 25 ]. More applications are expected to be developed based on such a subsurface PS.…”

Section: Introductionmentioning

confidence: 99%

Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

et al. 2023

View full text Add to dashboard Cite

The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress shield effect, we investigated the lattice constant variations among different growth layers in various samples of overgrown Al0.3Ga0.7N on GaN templates under different strain-relaxation conditions based on d-spacing crystal lattice analysis. The fabrication of a strain-damping PS in a GaN template shields against the stress from the thick GaN template on the GaN interlayer, which lies between the PS and the overgrown AlGaN layer, such that the stress counteraction of the AlGaN layer against the GaN interlayer can reduce the tensile strain in AlGaN and increase its critical thickness. If the GaN interlayer is thin, such that a strong AlGaN counteraction occurs, the increased critical thickness can become larger than the overgrown AlGaN thickness. In this situation, crack-free, thick AlGaN overgrowth is feasible.

show abstract

Polarization Properties of InGaN Vertical-Cavity Surface-Emitting Laser With Pipe Distributed Bragg Reflector

Cited by 5 publications

References 17 publications

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

Long-Cavity M-Plane GaN-Based Vertical-Cavity Surface-Emitting Lasers with a Topside Monolithic Curved Mirror

Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR

Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

Contact Info

Product

Resources

About