Polarization reversal due to charge injection in ferroelectric films

Bühlmann, Simon; Colla, Enrico; Muralt, Paul

doi:10.1103/physrevb.72.214120

Cited by 95 publications

(92 citation statements)

References 12 publications

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“…This is in good agreement with recently published results [10]. However, it is not possible to deduce the exact values of coercive fields as the detailed poling process via the inhomogeneous field of the tip is still under discussion [17][18][19]. Nonetheless, PFM imaging is not hampered by the inhomogeneous field [20], yielding distinct differences in the poling process: in the irradiated region of the crystal the domains always grow in regular shaped hexagons whereas in the non-irradiated part the domain structures are distinctly less hexagonally shaped and rather circular.…”

Section: Discussionsupporting

confidence: 81%

Radiation-damage-assisted ferroelectric domain structuring in magnesium-doped lithium niobate

et al. 2009

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Irradiation of 5% magnesium-doped lithium niobate crystals (LiNbO 3 :Mg) with high-energy, low-mass 3 He ions, which are transmitted through the crystal, changes the domain reversal properties of the material. This enables easier domain engineering compared to non-irradiated material and assists the formation of small-sized periodically poled domains in LiNbO 3 :Mg. Periodic domain structures exhibiting a width of ≈520 nm are obtained in radiation-damaged sections of the crystals. The ferroelectric poling behavior between irradiated and non-treated material is compared.PACS 78.20 · 42.65

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Section: Discussionsupporting

confidence: 81%

Radiation-damage-assisted ferroelectric domain structuring in magnesium-doped lithium niobate

et al. 2009

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“…Similar behaviour has been observed by the number of scientific groups and has been attributed to charge injection 30,32,37 and ferroelastoelectric switching due to mechanical stress under the tip 31 . In this particular case, ferroelastic explanation is unlikely because the switching kinetics in our investigations was not dependent on the mechanical characteristics of the used tip and load on the tip, which is defined by the value of SPM set point parameter.…”

Section: Resultssupporting

confidence: 57%

“…In the lithium niobate, domains usually had regular hexagonal or circular shape 17,22,29 . In some cases, shape of the domains contained partially backswitched areas in the centre and along the path of grounded tip 25,[30][31][32] .…”

Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behaviour. Here we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviours are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect).

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“…[57][58][59] In recent studies, the role of these charges on polarization dynamics in PFM has been illustrated. [60][61][62] Hence, here we assume for generality that region between the tip apex and domain surface has effective dielectric permittivity, e . The polarization reversal on the domain face may be accompanied by several mechanisms of surface recharging up to value S , different from the initial charge S 0 =−P S , including the following.…”

Section: A Ambient Conditions and Screening Mechanismsmentioning

confidence: 99%