Polarization reversal induced by heating-cooling cycles in MgO doped lithium niobate crystals

Shur, V. Ya.; Mingaliev, E. A.; Лебедев, В. А.; Кузнецов, Д. К.; Fursov, D. V.

doi:10.1063/1.4801969

Cited by 26 publications

(8 citation statements)

References 31 publications

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“…It is known that a temperature change can cause domain back switching and domain wall motion in LiNbO 3 and LiTaO 3 . [34][35][36] The net pyroelectric field E pyr inside the crystal is the sum of the depolarizing field E dep caused by the spontaneous polarization P s and a screening field E scr…”

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confidence: 99%

Local domain inversion in MgO-doped lithium niobate by pyroelectric field-assisted femtosecond laser lithography

Imbrock

Hanafi

Ayoub

et al. 2018

Applied Physics Letters

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We explore a physical approach to invert ferroelectric domains in the volume of MgO-doped lithium niobate crystals without any external electric field. Permanent defect structures are created by focused infrared femtosecond laser pulses below the material surface along the polar axis followed by a thermal treatment. This procedure leads to an inversion of ferroelectric domains beneath and above the laser-induced filaments up to the surfaces of the crystal. All domain walls are straight and up to 800 μm long. We measure the domain width in dependence on the length of the filaments and the writing energy. The smallest achieved domain width and the domain spacing is 1 μm. We propose a model taking into account the temperature dependence of the pyroelectric field and thermally activated bulk charges to explain the mechanism of domain inversion. Our findings pave the way to all-optical printing of arbitrary ferroelectric domain structures for nonlinear photonic applications.

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confidence: 99%

Local domain inversion in MgO-doped lithium niobate by pyroelectric field-assisted femtosecond laser lithography

Imbrock

Hanafi

Ayoub

et al. 2018

Applied Physics Letters

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“…Ferroelectric materials have spontaneous polarizations that can be reversed under the application of stress, thermal radiation, light illumination, or external voltages to the materials. − The domain walls (DWs) that occur between two neighboring polarizations with different orientations may be conducting, although the ferroelectric materials themselves are generally insulating. In recent years, domain wall nanoelectronics, in which bipolar voltages are used to create or erase the DWs required for information storage, has seen rapid development .…”

Section: Introductionmentioning

confidence: 99%

Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories

Hou

Zhang

et al. 2021

ACS Appl. Mater. Interfaces

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Highly conductive domain walls in insulating ferroelectric LiNbO3 (LNO) single-crystal thin films with atomic smoothness are attractive for use in high-density integration of the ferroelectric domain wall random access memory (DWRAM) because of their excellent reliability and high read currents. However, downscaling of the memory size to the nanoscale could cause poor polarization retention. Understanding the size-dependent electrical performance of a memory cell is therefore crucial. In this work, highly insulating X-cut LNO thin films were bonded to SiO2/Si wafers and lateral mesa-like cells were fabricated on the film surfaces, where contact occurred with two-sided electrodes along the polar z-axis. Under application of an in-plane electric field above a coercive field (E c), the domain within each memory cell was switched to be antiparallel to the unswitched referencing domain at the bottom; this resulted in the formation of a conducting domain wall, which enables the nondestructive readout strategy of the DWRAM. The cell, which has a lateral length (l) above a critical size (l 0) of 105 nm, is found to be a mixture of two phases across the cell area. The inner area of the cell suffers from poor polarization retention because E c = 150 kV/cm, as demonstrated by in-plane piezoresponse force microscopy imaging. In comparison, the outer periphery domains, which have lengths of 70 nm (∼l 0/2), show good retention but require a much higher E c of 785 kV/cm. The relevant physics is discussed as phase reconstruction occurs after release of the in-plane compressive strain near the outer regions; the results show good agreement with those of one-dimensional thermodynamic calculations and phase-field simulations. The measured current–voltage curves demonstrated a sudden enhancement of the wall current across the cell when l < l 0, thus implying higher readout wall currents and better retention for the DWRAM at higher storage densities.

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“…Several groups have studied the thermal stability of domains in various ferroelectric materials, such as Rb-doped KTiOPO 4 [20], LiTaO 3 [21], Pb(Zr 0.4 Ti 0.6 )O 3 [22], and LiNbO 3 [23,24]. They reported that the ferroelectric domains would degrade, or even disappear, after heat treatment.…”

Section: Introductionmentioning

confidence: 99%

Improvement on Thermal Stability of Nano-Domains in Lithium Niobate Thin Films

Jiao

Shao

et al. 2020

Crystals

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We present a simple and effective way to improve the thermal stability of nano-domains written with an atomic force microscope (AFM)-tip voltage in a lithium niobate film on insulator (LNOI). We show that nano-domains in LNOI (whether in the form of stripe domains or dot domains) degraded, or even disappeared, after a post-poling thermal annealing treatment at a temperature on the order of ∼100 ∘ C. We experimentally confirmed that the thermal stability of nano-domains in LNOI is greatly improved if a pre-heat treatment is carried out for LNOI before the nano-domains are written. This thermal stability improvement of nano-domains is mainly attributed to the generation of a compensating space charge field parallel to the spontaneous polarization of written nano-domains during the pre-heat treatment process.

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Polarization reversal induced by heating-cooling cycles in MgO doped lithium niobate crystals

Cited by 26 publications

References 31 publications

Local domain inversion in MgO-doped lithium niobate by pyroelectric field-assisted femtosecond laser lithography

Local domain inversion in MgO-doped lithium niobate by pyroelectric field-assisted femtosecond laser lithography

Size-Controlled Polarization Retention and Wall Current in Lithium Niobate Single-Crystal Memories

Improvement on Thermal Stability of Nano-Domains in Lithium Niobate Thin Films

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