Polarization Reversal Kinetics in Strontium Barium Niobate Relaxor Crystals

Matyjasek, K.; Wolska, K.; Rogowski, R. Z.; Kaczmarek, S.M.; Ivleva, L. I.

doi:10.1080/00150193.2011.531212

Cited by 3 publications

(4 citation statements)

References 33 publications

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“…Formation of the microscale domains, in the monodomain crystal sample, is possible if the amplitude of the dc electric field exceeds some threshold value, at a given site of the crystal. It has been recently reported that even nominally pure SBN:61 crystal samples are inhomogeneous; some regions of the crystal sample are switched very fast (with large density of nucleated domains) and there are regions where nucleation process is suppressed [26]. The fact that the similar picture of the delineated domains has been observed for positive and negative electric field demonstrates the presence of a frozen polarization state, possibly due to locally accumulated defects.…”

Section: Domain Structure Dynamicssupporting

confidence: 51%

“…5. It is interesting to note that the KWW function described the switching kinetics in undoped SBN:61 [26] as well as relaxing domains on the nanoscale, with PFM imaging of the domain configuration in SNB:61 doped with cerium [14]. Figure 6(a-c) presents the dielectric characteristics of the examined crystal samples as a function of temperature at various frequencies.…”

Section: Switching Current Measurementsmentioning

confidence: 99%

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Effect of Ni doping on ferroelectric and dielectric properties of strontium barium niobate crystals

et al. 2011

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The influence of Ni doping on the ferroelectric and dielectric properties have been examined in Sr 0.61 Ba 0.39 Nb 2 O 6 (SBN:61) relaxor crystals. The dopants introduced into SBN:61 crystals promote the switching process by reducing the value of threshold nucleation field, and thus coercive field. We present real-time studies of domain nucleation and growth processes in doped SBN:61 by the nematic liquid crystal (NLC) decoration technique. The broad phase transition and low-frequency dielectric dispersion that are exhibited by doped SBN:61 samples have a strong link to the configuration of the ferroelectrics microdomains, which in turn is strongly determined by Ni ions concentration.

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Section: Domain Structure Dynamicssupporting

confidence: 51%

Section: Switching Current Measurementsmentioning

confidence: 99%

Effect of Ni doping on ferroelectric and dielectric properties of strontium barium niobate crystals

et al. 2011

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“…The nucleation process continues to take place during almost the whole polarization reversal process, at a constant electric field. The specific mechanism of nucleation in SBN could be interpreted in terms of a wide distribution of activation energies for nucleation resulting from the local structural irregularities [7,8].…”

Section: Resultsmentioning

confidence: 99%

Comparison of polarization switching in ferroelectric TGS and relaxor SBN crystals

Matyjasek¹,

Orłowski²

2013

Condens. Matter Phys.

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The comparative experimental analysis of polarization reversal kinetics in conventional homogeneous triglycine sulfate ((NH 2 CH 2 COOH) 3 ·H 2 SO 4 ; TGS) and relaxor strontium barium niobate (Sr 0.61 Ba 0.39 Nb 2 O 6 ; SBN) crystals have been performed in a broad range of measurement conditions. The experimental data have been collected from microscopic observation of the domain structure, switching current and D −E hysteresis loop registration.The hysteresis loop and dielectric spectra have a strong link to the configuration of ferroelectric microdomains. The domain structure dynamics was examined by the nematic liquid crystal (NLC) method.

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“…Similar inhomogeneity in electric field distribution has been observed in studies involving other ferro electrics. [57][58][59] The inherently disordered PMN-PT structure coupled with the large volume of single crystals employed in this study further facilitates the inhomogeneity in polarization reversal. [60,61] Determining the exact cause of inhomogeneity would require a dedicated study involving in situ structural characterizations, which could be an interesting area for future research.…”

Section: Domain Wall Density Measured By Plmmentioning

confidence: 99%

Ferroelectric Domain Wall Engineering Enables Thermal Modulation in PMN–PT Single Crystals

et al. 2023

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DWs results in anomalous behavior in the material compared to the mono domain state. In relaxorferroelectrics such as Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT) or Pb(In 1/2 Nb 1/2 )O 3 -Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PIN-PMN-PT), manipulating DWs has been shown to achieve excep tional dielectric and piezoelectric proper ties, lending them as excellent candidates for several electromechanical applica tions including sensors, actuators, energy storage, drug delivery, diagnostic imaging, and nondestructive testing. [4][5][6][7][8][9] Among several DW engineering methods to achieve further enhancement, the use of alternating current poling (ACP) to manipulate domains has received con siderable attention due to its convenience and effectiveness. [10][11][12][13][14][15][16] Studies have shown that up to 40% enhancement in piezo electric coefficient (d 33 ) and 35% enhance ment in free dielectric constants using ACP compared to conventional direct cur rent poling (DCP) methods. [10][11][12][13][14][15][16] However, even though the DW engineeringbased piezoelectric property enhancement is consistent for ACP, a consensus on how the domain size (or DW density) influences the piezoelectric properties is still not reached. Conventional belief in ferro electrics has been that the property enhancement is due to high domain wall density. [17][18][19] Studies by Chang et al., [11] Xu et al., [16] Zhang et al., [13] and Sun et al. [10] on PMN-PT single crystals (SCs) show that the presence of monoclinic phases and finer domain sizes as a result of ACP are responsible for piezoelectric property enhancement, indicating that the con ventional wisdom still holds for relaxorferroelectrics. However, Acting like thermal resistances, ferroelectric domain walls can be manipulated to realize dynamic modulation of thermal conductivity (k), which is essential for developing novel phononic circuits. Despite the interest, little attention has been paid to achieving room-temperature thermal modulation in bulk materials due to challenges in obtaining a high thermal conductivity switching ratio (k high /k low ), particularly in commercially viable materials. Here, room-temperature thermal modulation in 2.5 mm-thick Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMN-xPT) single crystals is demonstrated. With the use of advanced poling conditions, assisted by the systematic study on composition and orientation dependence of PMN-xPT, a range of thermal conductivity switching ratios with a maximum of ≈1.27 is observed. Simultaneous measurements of piezoelectric coefficient (d 33 ) to characterize the poling state, domain wall density using polarized light microscopy (PLM), and birefringence change using quantitative PLM reveal that compared to the unpoled state, the domain wall density at intermediate poling states (0< d 33

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Polarization Reversal Kinetics in Strontium Barium Niobate Relaxor Crystals

Cited by 3 publications

References 33 publications

Effect of Ni doping on ferroelectric and dielectric properties of strontium barium niobate crystals

Effect of Ni doping on ferroelectric and dielectric properties of strontium barium niobate crystals

Comparison of polarization switching in ferroelectric TGS and relaxor SBN crystals

Ferroelectric Domain Wall Engineering Enables Thermal Modulation in PMN–PT Single Crystals

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