Polarization-Sensitive Detector Based on MoTe₂/WTe₂ Heterojunction for Broadband Optoelectronic Imaging

Abstract

Polarization-sensitive detectors have significant applications in modern communication and information processing. In this study. We present a polarization-sensitive detector based on a MoTe2/WTe2 heterojunction, where WTe2 forms a favorable bandgap structure with MoTe2 after forming the heterojunction. This enhances the carrier separation efficiency and photoelectric response. We successfully achieved wide spectral detection ranging from visible to near-infrared light. Specifically, under zero bias, our photodetector exhibits a responsivity (R) of 0.6 A/W and a detectivity (D*) of 3.6 × 1013 Jones for 635 nm laser illumination. Moreover, the photoswitching ratio can approach approximately 6.3 × 105. Importantly, the polarization sensitivity can reach 3.5 (5.2) at 635 (1310) nm polarized light at zero bias. This study both unveils potential for utilizing MoTe2/WTe2 heterojunctions as polarization-sensitive detectors and provides novel insights for developing high-performance optoelectronic devices.

Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed

“…On the contrary, two-dimensional (2D) materials, − including graphene, transition metal dichalcogenides (TMDCs) , and black phosphorus (BP), have become ideal candidates for MIR light detection, due to their optoelectronic properties and ease of integration . BP has a small bandgap energy of 0.3 eV and a high carrier mobility of 1000 cm 2 ·V –1 ·s –1 , with high responsivity in mid-infrared (<4 μm) detection − and near-infrared detection. − However, its environmental stability is poor, leading to a decrease in detector performance. , Graphene is capable of realizing ultrabroadband light absorption, but dark currents in graphene-based photodetectors are large and the corresponding photoresponsivities are poor because of the zero bandgap and low optical absorption. , Conventional 2D TMDCs can have fascinating optical properties, but the large bandgap and limited charge carrier mobility limit their applications in the MIR region. , …”