Perovskite oxides such as PbZr x Ti 1-x O 3 (PZT) and BaTiO 3 show excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties simultaneously and have been widely used in capacitor, sensor, actuator, motor, surface acoustic wave devices (SAW) and energy storage applications. Recently, a variety of solution-processed halide perovskite materials were discovered to exhibit fascinating properties such as high charge mobility, strong light absorption and even ferroelectricity. In this review, we summarize the recent progress on two classes of halide perovskite ferroelectrics. The first class is organo-lead halide perovskite semiconductor such as MAPbI 3 , which have been intensively pursued for solar cell and light emitting diode applications. Dynamic ferroelectric polarization is believed to be one of the This article is protected by copyright. All rights reserved. 2 essential factors to protect carriers from being scattered by charged defects in these halide perovskites. The second class is normal/multilayered halide perovskite ferroelectrics with large polarization or strong piezoelectricity. The piezoelectric coefficient of these latter perovskites can be as high as ~1540 pC N -1 , comparable to those of PZT-based ferroelectrics.Multiaxial polarizations and morphotropic phase boundaries (MPB) have also been demonstrated in such halide perovskites. Overall, the fast development of halide perovskite ferroelectrics opens a new venue for not only advancing fundamental materials science but also designing novel electronic and photoelectric devices.