Polarized Raman Scattering in Transparent Polycrystalline Solids

Brya, W. J.

doi:10.1103/physrevlett.26.1114

Cited by 39 publications

(16 citation statements)

References 8 publications

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“…26,29,30 The Raman studies on the tetragonal region of the PLZT system have been thoroughly performed, and the peaks have been almost fully assigned. 31,32 Recently, Raman studies on the phase boundary region of PLZT (e.g., La:Zr:Ti ‫ס‬ 9:65:35) have been reported by Dellis et al 33 and Marssi and co-workers 34,35 but the Raman peaks are partially assigned because of their very broad peak characteristics. Therefore, we focus only on the variation in Raman spectra with varying lanthanide ion or their substitution site.…”

Section: (4) Raman Spectramentioning

confidence: 97%

Structural and Dielectric Properties of PLZT Ceramics Modified with Lanthanide Ions

Park

Hong

et al. 1999

Journal of the American Ceramic Society

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Lanthanide-modified lead lanthanum zirconate titanate (PLZT) ceramics were prepared through a hydroxide coprecipitation method, and the effects of the lanthanide ions on the structural and dielectric properties of the PLZT ceramics were investigated. The substitution site of the lanthanide ions was found to change from the A site to the B site with decreased lanthanide ionic radius by comparing theoretically calculated and experimentally measured unitcell volumes and densities. The variation of structural and dielectric properties in the lanthanide-modified PLZT series was highly correlated to the change of substitution site, leading to the compositional change of the unit cell. Raman spectra showed that the B-site local structures were affected by the substitution type.

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Section: (4) Raman Spectramentioning

confidence: 97%

Structural and Dielectric Properties of PLZT Ceramics Modified with Lanthanide Ions

Park

Hong

et al. 1999

Journal of the American Ceramic Society

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“…It is then better to use the peak in the loss spectra which is given by 2 T / T . Symmetry considerations for PZT in the tetragonal P4mm space group [19] allow seven IR active modes (3A 1 (c) þ 4E(a, b)) steaming from the three triplets F 1u IR active in the cubic paraelectric phase, well known in perovskites. In table 2 one can see that we obtained 14 modes for the fit of sample with x ¼ 5 and 13 modes for x ¼ 12 and x ¼ 15.…”

Section: Ir and Thz Measurementsmentioning

confidence: 99%

Broad-band dielectric spectroscopy of tetragonal PLZTx/40/60

et al. 2006

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The dielectric behaviour of tetragonal PLZT x/40/60 ceramics doped with lanthanum (x ¼ 5, 12 and 15%) has been investigated at 100-10 14 Hz. Dielectric, THz and infrared spectra were measured from 500 to 20 K. For x ! 12 relaxor ferroelectric behaviour was observed. All three samples showed an additional relaxational mode below phonons. Analysis of the phonon modes for ferroelectric PLZT 5/40/60 is presented together with the complete dielectric behaviour.

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“…The broad peak at around 740 cm-1, however, is believed to be the Raman peak caused by the remnant amorphous phase in these films [39,40]. It is noted that in the case of thin films the background in Raman spectra at low frequencies is quite high, and that Raman peaks in the PZT 40/60 thin films shift to the low frequencies compared with the powder Raman spectra [34,35], indicating the existence of tensile stress in the fihns. A similar phenomenon was reported by Taguchi and his coworkers [33].…”

Section: 3mentioning

confidence: 99%

“…As a result, the Raman excitation of active modes becomes stronger and stronger, which is a good indication of the development of crystallinity for the PZT 40/60 per0vskite phase. The peaks at wave numbers around 198, 285, 337 and 606 cm-a are identified as E(2TO), B1 + E, AI(2TO), and AI(3TO)[33][34][35][36][37][38], respectively, whereas the peaks at 519 and 940 cm-Dielectric constant of the film inFig. 6as a function of the applied electric field.…”

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confidence: 99%

Raman, FT-IR and dielectric studies of PZT 40/60 films deposited by MOD technology

Zhu

Liu

Tse

et al. 1995

J Mater Sci: Mater Electron

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Ferroelectric Pb(Zro.4Ti0.6) 03 (PZT 40/60) thin films with uniform composition have been fabricated using the metallo-organic precursor compounds lead di-ethylhexanoate Pb(CTH.IsCO0)2, titanium di-methoxy-di-neodecanoate Ti(OCHs)2(CgH19CO0)2 and zirconium octoate Zr(CTH15CO0)4. These metallo-organic precursors were stored for more than four years and are very stable in ambient conditions, compared to sol-gel solutions. The structural development of these films under different annealing temperatures was systematically studied using X-ray diffraction, FT-IR spectroscopy and Raman scattering. The results show that the overlapping of (hO0) and (001) peaks of the PZT 40/60 films in X-ray diffraction patterns, mainly due to the small grain sizes in films, makes it very difficult to distinguish individual diffraction peaks and to identify the phases. In FT-IR measurements, the intensity of Zr/Ti06 metal-oxygen octahedral vibrational modes becomes stronger with increasing annealing temperatures, while the FT-IR spectral peaks of vibrations of the residual carbon ligands (COO-) finally disappear at high temperatures, showing that FT-IR spectroscopy is a good way to monitor the growth of the perovskite phase in PZT 40/60 films. Raman measurements undoubtedly reveal the Raman spectra of these PZT 40/60 films in the tetragonal phase field, demonstrating that Raman spectroscopy is an effective tool to identify structures, especially in the case of thin films having small grains. The values of high dielectric constant and the total remanent polarization obtained by ferroelectric pulse measurements show that the PZT film is a suitable material for non-volatile random access memory and dynamic random access memory applications.

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Polarized Raman Scattering in Transparent Polycrystalline Solids

Cited by 39 publications

References 8 publications

Structural and Dielectric Properties of PLZT Ceramics Modified with Lanthanide Ions

Structural and Dielectric Properties of PLZT Ceramics Modified with Lanthanide Ions

Broad-band dielectric spectroscopy of tetragonal PLZTx/40/60

Raman, FT-IR and dielectric studies of PZT 40/60 films deposited by MOD technology

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