Polarized Raman spectroscopy to elucidate the texture of synthesized MoS<sub>2</sub>

Vandalon, Vincent; Sharma, Akhil; Perrotta, Alberto; Schrode, Benedikt; Verheijen, Marcel A.; Bol, Ageeth A.

doi:10.1039/c9nr08750h

Cited by 17 publications

(17 citation statements)

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“…This improved crystallinity is also typically observed for the intrinsic films after high-temperature annealing. 21 , 57 However, the resistivity of both samples increased by more than an order of magnitude to 40 and 70 Ω·cm, respectively. This high-temperature annealing was not investigated further because adding a high-temperature annealing rules out compatibility with back-end-of-line processing and deposition on temperature-sensitive substrates, which is one of the benefits of this approach.…”

Section: Results and Discussionmentioning

confidence: 95%

“…This suggests a slightly more disordered, yet crystalline structure. The dopant concentration in TMDs has been shown to affect the spectral position of the Raman peaks; 63 however, this effect is difficult to isolate from other effects such as texture, 57 strain, 64 and grain size, 65 which also likely play a role in these films.…”

Section: Results and Discussionmentioning

confidence: 99%

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Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Vandalon

Verheijen

Kessels

et al. 2020

ACS Appl. Nano Mater.

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Extrinsically doped two-dimensional (2D) semiconductors are essential for the fabrication of high-performance nanoelectronics among many other applications. Herein, we present a facile synthesis method for Al-doped MoS 2 via plasma-enhanced atomic layer deposition (ALD), resulting in a particularly sought-after p -type 2D material. Precise and accurate control over the carrier concentration was achieved over a wide range (10 17 up to 10 21 cm –3 ) while retaining good crystallinity, mobility, and stoichiometry. This ALD-based approach also affords excellent control over the doping profile, as demonstrated by a combined transmission electron microscopy and energy-dispersive X-ray spectroscopy study. Sharp transitions in the Al concentration were realized and both doped and undoped materials had the characteristic 2D-layered nature. The fine control over the doping concentration, combined with the conformality and uniformity, and subnanometer thickness control inherent to ALD should ensure compatibility with large-scale fabrication. This makes Al:MoS 2 ALD of interest not only for nanoelectronics but also for photovoltaics and transition-metal dichalcogenide-based catalysts.

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Section: Results and Discussionmentioning

confidence: 95%

Section: Results and Discussionmentioning

confidence: 99%

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Vandalon

Verheijen

Kessels

et al. 2020

ACS Appl. Nano Mater.

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“…LIB [221] Mo(N t Bu) 2 (NMe 2 ) 2 + H 2 / H 2 S plasma 150−450 1 ML flakes to tens of nm rough films (10-50 nm) HER 2018 [105,222] [ 223] 450 (900, H 2 S) 2 ML films to 40 nm rough films (cryst.) - [224] Mo(N t Bu) 2 (NMe 2 ) 2 + H 2 S plasma 250 (750, S) a few ML-10 nm films (ann. ≈5-10 nm) - [127] Mo(N t Bu) 2 (NMe 2 ) 2 + PrSH 250-400 2 ML to 15 nm films (as-dep.…”

Section: Atomic Layer Deposition Processes For 2d Metal Dichalcogenidesmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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“…18,19 Although the theoretical simulation showed that the predominant orientation of grains and the distribution of orientation angles can be evaluated from the A 1g /E 1 2g peak area ratio, it is hard to experimentally control or identify the angular distribution of grains (not just horizontal and vertical). The polarized Raman study 23 reported that the A 1g /E 1 2g ratio increased by a factor of 2 in MoS 2 with 75% of grains being vertically grown, in comparison with that of horizontally grown MoS 2 . 23 However, the relationship between the A 1g /E 1 2g ratio and the angular distribution of grains has not been experimentally established yet.…”

Section: Introductionmentioning

confidence: 99%

Correlation of grain orientations and the thickness of gradient MoS₂ films

et al. 2021

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Polarized Raman spectroscopy to elucidate the texture of synthesized MoS₂

Cited by 17 publications

References 60 publications

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Correlation of grain orientations and the thickness of gradient MoS₂ films

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Polarized Raman spectroscopy to elucidate the texture of synthesized MoS2

Cited by 17 publications

References 60 publications

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of Al-Doped MoS2: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Correlation of grain orientations and the thickness of gradient MoS2 films

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Polarized Raman spectroscopy to elucidate the texture of synthesized MoS₂

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Atomic Layer Deposition of Al-Doped MoS₂: Synthesizing a p-type 2D Semiconductor with Tunable Carrier Density

Correlation of grain orientations and the thickness of gradient MoS₂ films