1999
DOI: 10.1002/(sici)1521-3951(199903)212:1<97::aid-pssb97>3.0.co;2-k
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Polaronic Effect on the Ground-State Energy of an Electron Bound to an Impurity in Spherical Quantum Dots

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Cited by 11 publications
(8 citation statements)
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“…2 that this energy shift is more significant for a strong confinement size and decreases in proportion with the increase of the dot dimension [20]. In the case of an infinite potential barrier, the localization of the electron becomes more pronounced and thus increases both the electron±LO phonon interaction E e-LO and the exchange between the fixed positive charge and electron via the LO confined phonon E ex e-LO-ion .…”
Section: Resultsmentioning
confidence: 59%
See 1 more Smart Citation
“…2 that this energy shift is more significant for a strong confinement size and decreases in proportion with the increase of the dot dimension [20]. In the case of an infinite potential barrier, the localization of the electron becomes more pronounced and thus increases both the electron±LO phonon interaction E e-LO and the exchange between the fixed positive charge and electron via the LO confined phonon E ex e-LO-ion .…”
Section: Resultsmentioning
confidence: 59%
“…Chen et al [19] have examined the effect of thickness on the binding energy of bound polaron in a parabolic quantum dot subjected to a magnetic field by using the second-order perturbation theory and taking only the electron±bulk LO phonon coupling into account. However, in most studies done previously, the interaction between the fixed positive charge and optical phonons (LO and SO) [20,21] has been considered. This last interaction will be able to have the same importance as the electron± phonon coupling in these confined systems.…”
Section: Introductionmentioning
confidence: 99%
“…2) we notice that on the one hand, both corrections augment proportionally with the height and on the other hand the The same results are shown for the surface optical phonon modes in spherical quantum dot [24]. The effect of TSO phonon modes on the binding energy presents a prominent impact only for the small dot (weak thickness).…”
Section: R E T H E E F F E C T I V E P O T E N T I a L S I N D U C E mentioning
confidence: 99%
“…Fedorov and Baranov 25 have studied the effect of LO and surface optical ͑SO͒ phonons on the donor energy. Fliyou et al 26 have calculated the binding energy of a hydrogenic impurity in a GaAs QNC using the Lee, Low, and Pines transformation 27 and the variational method. In a ZnSe QNC, Xie, and Chen 28 have shown that the phonon contribution to the binding energy is dependent on the position of the donor.…”
Section: Introductionmentioning
confidence: 99%